Clusters formation in ultralow-energy high-dose boron-implanted silicon

Cristiano, Fuccio; Hebras, Xavier; Cherkashin, Nikolay; Claverie, A.; Lerch, W.; Paul, S.

doi:10.1063/1.1637440

Cited by 65 publications

(60 citation statements)

References 18 publications

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“…The number density of clusters (~ 10 18 clusters/cm 3 ) is observed to decrease drastically for depth exceeding 100 nm. These clusters have the shape of platelets parallel to the implanted surface, in agreement with BIC's (boron interstitial clusters) observed by Cristiano et al [17]. The average boron content in these cluster as determined from LaWaTAP images was found close to 7 at% [18].…”

Section: Dopant Distribution In Boron-implanted Siliconsupporting

confidence: 76%

The investigation of boron-doped silicon using atom probe tomography

Blavette

Cadel

Cojocaru-Mirédin

et al. 2010

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract. Three-dimensional atom-probe (3DAP) is the only analytical microscope able to map out the distribution of elements in 3D at the atomic scale. 3DAP provides quantitative measurements of local chemical composition in a small selected volume. A new generation of instrument, namely, a laser assisted tomographic atom probe (laser assisted wide angle atom probe LaWaTAP) has recently been designed in order to open the instrument to bad electric conductors. The use of ultra-fast laser pulses rather than of high-voltage pulses to field evaporate surface atoms makes the analysis of semiconductors or oxides that are key materials in microelectronics possible. This article is focussed on methodology and applications to boron-doped silicon. Depth profiles related to boron in various samples (boron deltas, SiGe Maya layers, boron-implanted silicon, …) will be discussed and compared to SIMS results. Spatial resolution and sensitivities will be compared.

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Section: Dopant Distribution In Boron-implanted Siliconsupporting

confidence: 76%

The investigation of boron-doped silicon using atom probe tomography

Blavette

Cadel

Cojocaru-Mirédin

et al. 2010

IOP Conf. Ser.: Mater. Sci. Eng.

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“…In the case of high B concentration levels such as 10 21 cm −3 , the existence of defects has been observed by TEM measurements. 27 The existence of B clusters is observed as an immobile B spike by SIMS measurements, and electrical measurements show that the immobile B spike is electrically inactive. The static B peak is observed to dissolve on a time scale of more than 4 h during annealing at 800°C after the formation of the B clusters.…”

Section: A Origin Of B-h Complexesmentioning

confidence: 99%

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

et al. 2005

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The formation of hydrogen ͑H͒ related complexes and their effect on boron ͑B͒ dopant were investigated in B-ion implanted and annealed silicon ͑Si͒ substrates treated with a high concentration of H. Isotope shifts by replacement of 10 B with 11 B were observed for some H-related Raman peaks, but not for other peaks. This shows proof of the formation of B-H complexes in which H directly bonds to B in Si. This is an experimental result concerning the formation of B-H complexes with H bonded primarily to B. Electrical resistivity measurements showed that the B acceptors are passivated via the formation of the observed B-H complexes, as well as the well-known passivation center in B-doped Si; namely, the H-B passivation center.

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“…90,91 Weakbeam-dark-field (WBDF) analyses performed on high-dose, 0.5 keV B implanted crystalline Si, after a low-temperature annealing, evidenced the formation of large BICs (with hundreds of atoms) within the damage region. 90 Later on, large BICs have been observed also out of the implant damage region, by employing an MBE grown sample (containing a buried, highly doped B profile) subjected to shallow Si implantation (Fig. 16).…”

Section: B-i Clusters Formation and Dissolutionmentioning

confidence: 99%

Mechanisms of boron diffusion in silicon and germanium

Mirabella

Salvador

Napolitani

et al. 2013

Journal of Applied Physics

103

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B migration in Si and Ge matrices raised a vast attention because of its inﬂuence on the production of conﬁned, highly p-doped regions, as required by the miniaturization trend. In this scenario, the diffusion of B atoms can take place under severe conditions, often concomitant, such as very large concentration gradients, non-equilibrium point defect density, amorphous-crystalline transition, extrinsic doping level, co-doping, B clusters formation and dissolution, ultra-short high-temperature annealing. In this paper, we review a large amount of experimental work and present our current understanding of the B diffusion mechanism, disentangling concomitant effects and describing the underlying physics. Whatever the matrix, B migration in amorphous (a-) or crystalline (c-) Si, or c-Ge is revealed to be an indirect process, activated by point defects of the hosting medium. In a-Si in the 450-650 C range, B diffusivity is 5 orders of magnitude higher than in c-Si, with a transient longer than the typical amorphous relaxation time. A quick B precipitation is also evidenced for concentrations larger than 2 x10^20 B/cm3. B migration in a-Si occurs with the creation of a metastable mobile B, jumping between adjacent sites, stimulated by dangling bonds of a-Si whose density is enhanced by B itself (larger B density causes higher B diffusivity). Similar activation energies for migration of B atoms (3.0 eV) and of dangling bonds (2.6 eV) have been extracted. In c-Si, B diffusion is largely affected by the Fermi level position, occurring through the interaction between the negatively charged substitutional B and a self-interstitial (I) in the neutral or doubly positively charged state, if under intrinsic or extrinsic (p-type doping) conditions, respectively. After charge exchanges, the migrating, uncharged BI pair is formed. Under high n-type doping conditions, B diffusion occurs also through the negatively charged BI pair, even if the migration is depressed by Coulomb pairing with n-type dopants. The interplay between B clustering and migration is also modeled, since B diffusion is greatly affected by precipitation. Small (below 1 nm) and relatively large (5-10 nm in size) BI clusters have been identiﬁed with different energy barriers for thermal dissolution (3.6 or 4.8 eV, respectively). In c-Ge, B motion is by far less evident than in c-Si, even if the migration mechanism is revealed to be similarly assisted by Is. If Is density is increased well above the equilibrium (as during ion irradiation), B diffusion occurs up to quite large extents and also at relatively low temperatures, disclosing the underlying mechanism. The lower B diffusivity and the larger activation barrier (4.65 eV, rather than 3.45 eV in c-Si) can be explained by the intrinsic shortage of Is in Ge and by their large formation energy. B diffusion can be strongly enhanced with a proper point defect engineering, as achieved with embedded GeO2 nanoclusters, causing at 650 °C a large Is supersaturation. These aspects of B diffusion are presented and discus...

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Clusters formation in ultralow-energy high-dose boron-implanted silicon

Cited by 65 publications

References 18 publications

The investigation of boron-doped silicon using atom probe tomography

The investigation of boron-doped silicon using atom probe tomography

Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms

Mechanisms of boron diffusion in silicon and germanium

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