2011
DOI: 10.1140/epjd/e2011-20280-3
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Cluster modeling of three types of double-walled armchair silicon carbide nanotubes

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Cited by 10 publications
(13 citation statements)
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“…The calculations indicate that all studied SiC nanotubes are semiconductors having indirect band gap. The obtained calculations for electronic properties are in agreement with previous studies [22,24]. In addition, the bandgap of double-walled SiC nanotubes is smaller than that of their single-walled constituent nanotubes.…”
Section: Ii-the Electronic Propertiessupporting
confidence: 90%
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“…The calculations indicate that all studied SiC nanotubes are semiconductors having indirect band gap. The obtained calculations for electronic properties are in agreement with previous studies [22,24]. In addition, the bandgap of double-walled SiC nanotubes is smaller than that of their single-walled constituent nanotubes.…”
Section: Ii-the Electronic Propertiessupporting
confidence: 90%
“…To consider the interaction energy among the outer and inner tubes the formation energies of the (n, n)@(m, m) DWSiCNTs (with n = 4 and 5 and m = 7 to 15) are calculated from their total energies relative to the corresponding isolated single-walled SiC nanotubes using the following equation [22][23][24]:…”
Section: I-the Stability Properties Of Armchair Dwsicntsmentioning
confidence: 99%
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“…These studies claim that the nanotubes with other ratios will eventually collapse the tube into nanowires or clusters with solid interiors. Some other theoretical studies [38][39][40][41] have suggested that the stable silicon carbide nanotubes are of three types-types 1, 2 and 3, depending upon the atomic arrangement in the nanotube. Type 1 consists of alternating Si and C atoms with each Si atoms having three C neighbors and vice versa.…”
Section: Introductionmentioning
confidence: 99%
“…1 Myriads of theoretical and experimental research have clearly shown that nanotube (NT) and nanoform conformations are also possible with many other elements and compounds such as B x C y N z , 2-6 NiCl, 7 NiCl 2 , 8 H 2 Ti 3 O 3 , 9 GaSe, 10 P, 11 Cu, 12 Bi, 13 Si, [14][15][16][17][18][19][20][21][22][23] Ge, 20 GeC, 24 SiC, [25][26][27][28][29][30][31][32][33][34][35][36][37] SiGe 38 39 and SiO 2 . 40 41 Both silicon and germanium reside in column IV of the periodic table and are isoelectronic to carbon.…”
Section: Introductionmentioning
confidence: 99%