Closure to “Discussion of ‘Silicon Deposition on a Rotating Disk’ [R. Pollard and J. Newman (pp. 744–752, Vol. 127, No. 3)]”

Pollard, Richard; Newman, John B.

doi:10.1149/1.2129589

Cited by 23 publications

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“…The gas properties of hydrogen, trichlorosilane, hydrogen chloride and their gas mixture, such as viscosity, thermal conductivity and heat capacity, were taken from the literature [25,26]. The properties of the mixed gas were estimated theoretically [27].…”

Section: Numerical Calculationmentioning

confidence: 99%

Dominant rate process of silicon surface etching by hydrogen chloride gas

et al. 2005

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Silicon surface etching and its dominant rate process are studied using hydrogen chloride gas in a wide concentration range of 1 -100% in ambient hydrogen at atmospheric pressure in a temperature range of 1023 -1423 K, linked with the numerical calculation accounting for the transport phenomena and the surface chemical reaction in the entire reactor. The etch rate, the gaseous products and the surface morphology are experimentally evaluated. The dominant rate equation accounting for the first-order successive reactions at silicon surface by hydrogen chloride gas is shown to be valid. The activation energy of the dominant surface process is evaluated to be 1.5 Â 10 5 J mol À 1 . The silicon deposition by the gaseous by-product, trichlorosilane, is shown to have a negligible influence on the silicon etch rate. D

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Section: Numerical Calculationmentioning

confidence: 99%

Dominant rate process of silicon surface etching by hydrogen chloride gas

et al. 2005

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“…Most of these studies addressed classical reactor configurations (see Fig. 4), such as horizontal rectangular duct reactors [14,[76][77][78][79][80][81][82], vertical impinging jet and rotating disk reactors [22,[83][84][85][86][87][88], pancake reactors [89,90], barrel reactors [91][92][93], planetary reactors [94][95][96], hot-wall multi-wafer LPCVD reactors [74,[97][98][99]. Many studies were devoted to low pressure single wafer reactors of the stagnation flow type [21,28,[100][101][102].…”

Section: Cvd Simulation Models: a Literature Reviewmentioning

confidence: 99%

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Kleijn

Dorsman

Kuijlaars

et al. 2007

Journal of Crystal Growth

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“…The rotating disk geometry has the important property that in certain operating regimes [44] the species and temperature gradients normal to the disk are equal everywhere on the disk. The equations describing the complex three-dimensional spiral fluid motion can be solved by a separation-ofvariables transformation [45,46] that reduces the equations to a system of ordinary differential equations.…”

Section: Spinmentioning

confidence: 99%

Chemical Kinetics Models for Semiconductor Processing

et al. 1997

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Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

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Closure to “Discussion of ‘Silicon Deposition on a Rotating Disk’ [R. Pollard and J. Newman (pp. 744–752, Vol. 127, No. 3)]”

Abstract: not Available.

Cited by 23 publications

References 0 publications

Dominant rate process of silicon surface etching by hydrogen chloride gas

Dominant rate process of silicon surface etching by hydrogen chloride gas

Multi-scale modeling of chemical vapor deposition processes for thin film technology

Chemical Kinetics Models for Semiconductor Processing

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