Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding

Abstract

Mahbub; Maaskant, Pleun P.; Frayssinet, E.; de Mierry, P.; Draeger, A. Rights

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

“…6 Moreover, InAlN has been used for the realization of ultraviolet photodiodes, 7 and cladding layers in edge emitting laser diodes. 8,9 Recently, p-type doping of InAlN layers was demonstrated. 10 Finally, an optically-pumped verticalexternalcavity surface emitting laser, 11 and anelectrically-pumped monolithic vertical cavity surface emitting laser 12 have been demonstrated with the use of a bottom InAlN/GaN DBR grown on free-standing (FS) GaN substrate.…”

Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

“…Lasing at $ 394 and $436 nm, respectively, were achieved in electrically injected, edge-emitting laser diodes, with a $480 nm thick Si-doped Al 1 À x In x N/GaN multilayer as cladding on the n-side of the waveguide. The effectiveness of Al 1 À x In x N in comparison to Al x Ga 1 À x N in confining the optical mode in a laser structure has been demonstrated by the vertical far-field measurements as presented elsewhere [38].…”

“…of energy barriers in the conduction band [37,38]. Therefore, in order to improve the electrical transport property in the Al 1 À x In x N/GaN multistack bottom cladding, it is envisaged for next study to increase further the doping level in Al 1 À x In x N, or to make grading interfaces.…”

“…However, as shown in the previous section, Al 1 À x In x N epilayers suffer from V-defects and large pits on the surface as they grow thicker than 100 nm. These V-defects within the bottom cladding layer can be the source not only for large optical losses but also for current leakage [37]. In addition, the defective Al 1 À x In x N surface with large pits will deteriorate the structural quality of the GaN waveguides and QWs active layers since they are directly grown on top of the bottom cladding.…”

“…Detailed description about the laser process (edge emitters with cleaved facets) and measurement device can be found in Ref. [38]. For sample L2, room temperature stimulated emission was obtained at $394 nm with a threshold current density of 6.7 kA/cm 2 .…”