Cleaning Challenges and Solutions for Advanced Technology Nodes

Mertens, Paul; Vos, Rita; Wada, M.; Arnauts, Sophia; Takahashi, Hideki; Tsvetanova, Diana; Cuypers, Dieter; Sioncke, Sonja; Valckx, N.; Brems, Steven; Hauptmann, Marc; Heyns, Marc

doi:10.1149/1.3630820

Cited by 10 publications

(5 citation statements)

References 12 publications

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“…An increase in particle removal efficiency with minimum material loss should be the focus of Ge/SiGe post-CMP cleaning process. 3,191 The use of electrochemical mechanical planarization (eCMP) overcomes the defects such as delamination, erosion, and metal layer peeling due to the high down pressure during CMP. eCMP uses an electrochemical reaction to alter the surface to form a passivation film.…”

Section: Future Aspects Of Post-cmp Cleaningmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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Chemical mechanical planarization (CMP), a commonly employed process for attaining local and global planarization in integrated circuits fabrication, leaves contaminants and defects on the surface polished. Due to the miniaturization of devices, new materials/ processes for the fabrication of IC circuits are considered, introducing new post-CMP issues. As such, understanding of post-CMP cleaning process is critical to choose an appropriate method for the given material. Here, the types of contaminants and defects generated during the post-CMP process and the issues related to it are discussed. The different physical and chemical cleaning methods employed in the post-CMP cleaning process to eradicate these defects are elucidated.In particular, the PVA brushing method, which is currently preferred, is elaborated upon in detail. The various chemistries, including the newly suggested ones in recent years for cleaning different substrates, are summarized. The post-CMP cleaning methods for various materials such as Cu, Al, W, Co, Ru, InGaAs, Ge, and SiO2 are mainly addressed here. This review also provides the direction of progress for the post-CMP cleaning process in terms of evolution of new techniques and chemistries for the next generation of materials.

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Section: Future Aspects Of Post-cmp Cleaningmentioning

confidence: 99%

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Hazarika,

Gupta,

Rajaraman

2023

ECS J. Solid State Sci. Technol.

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“…In recent years novel approaches for the nanofabrication of semiconductor devices are being studied. These include integration schemes such as FinFET (beyond Si: optionally adopting a replacement fin process flow), Gate-first approach replacement metal gate (RMG), and novel materials such as germanium and III-V compounds such as InGaAs, GaAs, InP, and InAlAs [1]. The introduction of Ge and short channel structures for CMOS devices has generated interest in terms of advantage in electron and hole mobility's.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment

Yoshida

Takahashi

Sato

et al. 2016

SSP

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The impact of rinsing liquid for Germanium surface after wet chemical treatment is described. The different Ge loss after processing with different rinse (UPW and CO2 water) were determined and the different surface morphologies on the Ge surface after processing with different chemicals (AOM, HF and HCl) were determined by XPS. It was found that the investigation of surface morphology after chemical treatment is necessary to understand the rinse effect and the results showed the CO2 water rinse can decrease and suppress Ge loss at chemical treatment

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“…These include integration schemes such as FinFET (beyond Si: optionally adopting a replacement fin process flow), Gate-first approach and Gate-last approach replacement metal gate (RMG), and novel materials such as Germanium and III-V elements, e.g. InGaAs, GaAs, InP, and InAlAs [1]. The introduction of Ge for CMOS devices is underway due to the higher electron and hole mobility.…”

Section: Introductionmentioning

confidence: 99%

Oxygen Control Challenge for Advanced Wet Processing

et al. 2015

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A control of Dissolved Oxygen (DO) in liquids and oxygen concentration in ambient atmosphere for semiconductor processing is described. The effects of low DO in wet processing for galvanic corrosion and water mark formation were evaluated using various oxygen concentration conditions with HF or HCl mixtures. It was found that the low DO concentration condition (25ppb) prevented the occurrence of defects (voiding, trenching or water marks). The results from processing a device sample showed that low DO concentration condition is required for advanced CMOS processing.

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Cleaning Challenges and Solutions for Advanced Technology Nodes

Cited by 10 publications

References 12 publications

Review—Post-Chemical Mechanical Planarization Cleaning Technology

Review—Post-Chemical Mechanical Planarization Cleaning Technology

The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment

Oxygen Control Challenge for Advanced Wet Processing

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