European Workshop Materials for Advanced Metallization, 1997
DOI: 10.1109/mam.1997.621064
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Cleaning after silicon oxide CMP

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“…Traditional standard cleaning solutions, such as alkaline SC1 (NH 4 OH:H 2 O 2 :H 2 O = 1:5:10) and acidic SPM (H 2 SO 4 :H 2 O 2 = 3 ∼ 4:1, contain strong acidic and alkaline substances (HCl, H 2 SO 4 and NH 4 OH), and need heating during the cleaning process. [13][14][15] Wu et al added non-ionic surfactant AEO-20 to SC1 to improve cleaning efficiency (CE), which could effectively remove particles with the SC1 10 times diluted. 16 To increase the CE of ceria particles on the surface of SiO 2 and Si 3 N 4 , Gowda et al used an alkaline cleaning solution with the addition of surfactant Triton X-100.…”
mentioning
confidence: 99%
“…Traditional standard cleaning solutions, such as alkaline SC1 (NH 4 OH:H 2 O 2 :H 2 O = 1:5:10) and acidic SPM (H 2 SO 4 :H 2 O 2 = 3 ∼ 4:1, contain strong acidic and alkaline substances (HCl, H 2 SO 4 and NH 4 OH), and need heating during the cleaning process. [13][14][15] Wu et al added non-ionic surfactant AEO-20 to SC1 to improve cleaning efficiency (CE), which could effectively remove particles with the SC1 10 times diluted. 16 To increase the CE of ceria particles on the surface of SiO 2 and Si 3 N 4 , Gowda et al used an alkaline cleaning solution with the addition of surfactant Triton X-100.…”
mentioning
confidence: 99%