2018
DOI: 10.1109/led.2018.2858245
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Classification of Three-Level Random Telegraph Noise and Its Application in Accurate Extraction of Trap Profiles in Oxide-Based Resistive Switching Memory

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Cited by 10 publications
(7 citation statements)
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“…The third state results in negative bursts when the degradation rate is larger than the weak transcriptional rate, while the fourth state results in a quiescent state of apparent inactivity when both transcription and degradation rates are sufficiently small. Therefore, in order to account for the negative-burst finding, we are left with three discernible states, forming a model similar to the three-state random telegraph noise (RTN) model (Gong et al, 2018) (Figures 5a, S5).…”
Section: Resultsmentioning
confidence: 99%
“…The third state results in negative bursts when the degradation rate is larger than the weak transcriptional rate, while the fourth state results in a quiescent state of apparent inactivity when both transcription and degradation rates are sufficiently small. Therefore, in order to account for the negative-burst finding, we are left with three discernible states, forming a model similar to the three-state random telegraph noise (RTN) model (Gong et al, 2018) (Figures 5a, S5).…”
Section: Resultsmentioning
confidence: 99%
“…The described behavior is exemplified by a measurement presented in [8] for a TMOx-based resistive switching memory (TMOxRAM), shown in Fig. 5.…”
Section: Rsmentioning
confidence: 94%
“…In this work, the physical mechanisms of the trap coupling effect on RTN amplitudes are studied based on experimental results from the literature [7,8]. The goal is to propose a simple model for trap coupling in conduction paths.…”
Section: Coupling Trap Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…Gong et. al. extracted the trap locations and energy levels by analyzing timing constants from the three-level RTN signals [15], [16]. Moreover, Wang et.…”
Section: Introductionmentioning
confidence: 99%