Class E RF/microwave power amplifier: linear "equivalent" of transistor's nonlinear output capacitance, normalized design and maximum operating frequency vs. output capacitance

Mediano, Arturo; Molina, P.; Navarro, Jesús

doi:10.1109/mwsym.2000.863298

Cited by 13 publications

(3 citation statements)

References 5 publications

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“…The exact value of C out is typically not available from the device large signal model in most cases. Second, C out is non-linear and varies with the drain voltage swing as well (16). Third, hybrid class-E amplifier designs are often realized with an un-packaged transistor chip to avoid extra parasitic capacitance which is particularly important for high frequency designs.…”

Section: Class-e Power Amplifier Designmentioning

confidence: 99%

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

Yang¹,

Peroulis

Katehi³

2014

ECS Trans.

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This paper presents the design, fabrication and measurements of a hybrid X-band class-E power amplifier with a MEMS output tuner that enables the power amplifier to operate at optimum efficiency and output power level despite the fabrication uncertainties/tolerances of the device and circuit. The tuner is implemented with two 2.8 : 1 analog MEMS varactors and covers an impedance range of resistance between 10 to 30 Ω and reactance of -3 to -9 Ω. The designed PA delivers 605 mW output power with power added efficiency of 52% at 10.5 GHz.

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Section: Class-e Power Amplifier Designmentioning

confidence: 99%

(Invited) An X-Band Class-E Power Amplifier with MEMS Output Impedance Tuner

Yang¹,

Peroulis

Katehi³

2014

ECS Trans.

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“…Several works in the literature related to the Class-DE inverter have focused on the following areas: steady-state analysis with half-bridge switching network at a fixed and any duty ratio [1], [5], [9], [12] and design of inverter with with linear and nonlinear shunt MOSFET capacitances [2], [14], [16], [17]. However, a detailed steady-state analysis of a full-bridge Class-DE inverter at any duty cycle has not been reported.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of full-bridge Class-DE inverter at fixed duty cycle

Luca

Grasso

Jacopo

et al. 2016

IECON 2016 - 42nd Annual Conference of the IEEE Industrial Electronics Society

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Abstract-This paper presents the following for a full-bridge Class-DE resonant inverter operating at a fixed duty ratio: (a) steady-state analysis using first-harmonic approximation and (b) derivation of closed-form expressions for the currents, voltages, and powers. The conversion from a series-parallel resonant network to a series resonant network is presented. Imposing the zero-voltage and zero-derivative switching conditions, the expression for a shunt capacitance across the MOSFETs in the inverter bridge is derived. The closed-form expressions to calculate the values of the resonant components are presented.A practical design of a Class-DE resonant inverter supplied by a dc input voltage of 230 V, delivering an output power of 920 W, and operating at a switching frequency of 100 kHz is considered and its design methodology is included. Theoretical results are validated by Saber simulations.

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“…In practice, the maximum frequency at which a device can switch is influenced by a combination of semiconductor technology, passives technology, and packaging and interconnection technologies. the maximum operating frequency of the class-E amplifier is limited mainly by the output capacitance of the switching device [14]- [15]. this capacitance is determined primarily by the semiconductor technology.…”

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confidence: 99%