Class-E Amplifiers and Applications at MF, HF, and VHF: Examples and Applications

Mediano, Arturo; Ortega-González, Francisco Javier

doi:10.1109/mmm.2018.2823238

Cited by 9 publications

(2 citation statements)

References 19 publications

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“…Table IV compares the wideband power amplifier in this work with other high-frequency power amplifiers in the literature. The design presented achieves both the highest efficiency and highest output power compared to the other wideband power amplifiers in [23,37,38]. The target application of this work is for the specific plasma etching system with a bandwidth of 12.56-14.56 MHz.…”

Section: Resultsmentioning

confidence: 99%

1 kW MHz Wideband Class E Power Amplifier

Tong

Rivas-Davila

2022

IEEE Open J. Power Electron.

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Class E power amplifiers are widely used in highfrequency applications due to their simplicity and use of only one ground-referenced switch. However, Class E power amplifiers are usually tuned to operate at a fixed frequency due to their resonant nature. Extending the bandwidth of these switch-mode power amplifiers is beneficial in many applications, such as plasma generators and wireless power transfer systems. In this paper, we present a 1 kW wideband Class E power amplifier using Silicon Carbide (SiC) MOSFETs that achieves 93% efficiency at 13.56 MHz with a bandwidth of ±1 MHz. We incorporate a reactance compensation network in the output loading stage to achieve wideband operation; design a custom gate drive circuit to reduce the gate power loss and improve thermal performance compared to using a gate driver IC. The total gate power of one SiC MOSFET is measured to be 1.55 W at 13.56 MHz.

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Section: Resultsmentioning

confidence: 99%

1 kW MHz Wideband Class E Power Amplifier

Tong

Rivas-Davila

2022

IEEE Open J. Power Electron.

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“…The 100% efficiency of these resonant power amplifiers stems from the zero-voltage switching (ZVS) technique [7][8][9][10][11][12][13][14][15][16][17][18][19]. The ZVS operation indeed works, but unfortunately, only for a specific load resistance.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Design Approach to Switch-Mode Resonant Power Amplifiers Exploiting Geodesic-to-Geodesic Impedance Conversion

MIZUTANI,

OHIRA

2024

IEICE Trans. Electron.

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This paper presents a comprehensive design approach to load-independent radio frequency (RF) power amplifiers. We project the zero-voltage-switching (ZVS) and zero-voltage-derivative-switching (ZVDS) load impedances onto a Smith chart, and find that their loci exhibit geodesic arcs. We exploit a two-port reactive network to convert the geodesic locus into another geodesic. This is named geodesic-to-geodesic (G2G) impedance conversion, and the power amplifier that employs G2G conversion is called class-G2G amplifier. We comprehensively explore the possible circuit topologies, and find that there are twenty G2G networks to create class-G2G amplifiers. We also find out that the class-G2G amplifier behaves like a transformer or a gyrator converting from dc to RF. The G2G design theory is verified via a circuit simulation. We also verified the theory through an experiment employing a prototype 100 W amplifier at 6.78 MHz. We conclude that the presented design approach is quite comprehensive and useful for the future development of high-efficiency RF power amplifiers.

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A concise high‐efficiency broadband parallel‐circuit Class‐E power amplifier

Lu,

Jiang,

Zhang

2024

Circuit Theory & Apps

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SummaryAn analysis of a single‐ended high‐efficiency broadband parallel‐circuit (PC) Class‐E power amplifier (PA) with a single reactance compensation technique (RCT) and low‐pass (LP) Chebyshev impedance transformer is first presented under low supply voltage. Analysis of the gate and drain voltage allows to determine the required optimum voltage values for the expected PA design objectives. Derivation and design procedure of the broadband matching network (MN) is provided, which can effectively filter out higher order harmonics and reduce circuit complexity. In addition, the load adaptability for this PA is studied, achieving higher than 67.87% drain efficiency (DE) in the case of load mismatch. A PC Class‐E PA based on NMOS transistor is designed and implemented to validate the analysis over a frequency band of 7–9.4 MHz. Experimental results show that the PA delivers 36.48–38.83 dBm output power with a DE of 84.91% to 86.91%, as well as achieves 83.98% to 86.28% power‐added efficiency (PAE), 19.48–21.83 dB gain with a low supply voltage of 12 V. It is also demonstrated that the experimental results exhibit good agreement with the simulation results, which prototype the radio frequency identification transmitter with broadband high‐efficiency and system compactness. To the author's knowledge, this study represents the first approach to design broadband PC Class‐E PA under low supply voltage for Internet of Things (IoT) applications at HF frequency band, such as electronic article surveillance (EAS) system.

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Class-E Amplifiers and Applications at MF, HF, and VHF: Examples and Applications

Cited by 9 publications

References 19 publications

1 kW MHz Wideband Class E Power Amplifier

1 kW MHz Wideband Class E Power Amplifier

Comprehensive Design Approach to Switch-Mode Resonant Power Amplifiers Exploiting Geodesic-to-Geodesic Impedance Conversion

A concise high‐efficiency broadband parallel‐circuit Class‐E power amplifier

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