A sequential process is used to synthesise CuInS 2 absorber layers for photovoltaic application. In this process CuIn precursor layers sputtered on molybdenum coated float glass are converted to CuInS 2 via sulphurisation in an elemental sulphur vapour ambient. A re-evaluation of process parameters has been performed including fine tuning of numerous minor aspects. Using optimised process conditions has lead to improved device performance, especially a narrowed distribution at higher module efficiencies is achieved. At the same time the process yield is improved resulting in fewer devices with poor electrical quality.Keywords: CuInS 2 , thin film, solar cell, module, efficiency
IntroductionBeside Cu(In,Ga)Se 2 a second thin film material from the chalcopyrite family, CuInS 2 , has recently been introduced into industrial production [1]. Although still somewhat lower in efficiency than Cu(In,Ga)Se 2 , a robust process has been developed that allows [5]. To the best of our knowledge none of these techniques has reached solar cell efficiencies that are obtained by the sequential process that we apply [6]. In this work we report on the optimisation of process parameters and the resulting progress in mini-module performance.
ExperimentalFor the fabrication of CuInS 2 modules a sequential process is used [7,8,9]. In a first step copper and indium are sputtered on molybdenum coated soda lime float glass. In a second step these metallic precursor layers are converted to the CuInS 2 semiconductor by chemical reaction in elemental sulphur vapour at temperatures of 500 -600 °C. This step is performed by rapid thermal processing (RTP) which allows fast temperature ramp-up and short process times [6].Modules are completed by wet chemical removal of the secondary copper sulphide phase, chemical bath deposition of a CdS buffer-layer, and sputter deposition of a ZnO window layer. To achieve an integrated series connection of the solar cells to modules, three patterning steps are used, P1 after molybdenum deposition by laser, P2 after CdS deposition and P3 after ZnO sputtering, the latter two made by mechanical scribing.This CuInS 2 process is used to prepare single solar cells of 0.5 cm 2 or larger and minimodules on 5x5 or 10x10 cm 2 substrates having 7 or 13 integrated series connected cells, respectively. In this paper we will concentrate on the influence of process parameter variations on the performance of 5x5 cm 2 modules. Most of the correlations, however, apply to single cells in the same way.
Results
2A number of process parameters have been evaluated on their impact on device performance. They will be discussed in the following sections.
Precursor Cu/In atomic ratioOnly copper-rich precursors are used with our CuInS 2 process. This means that considering CuInS 2 stoichiometry there is excess copper compared to indium, which forms the secondary copper sulphide phase with sulphur that is used in excess, too.Afterwards this copper sulphide phase is removed by wet chemical etching, thereby accurately adjusting st...