CISCuT absorber layers — the present model of thin film growth

Solar cells based on CuInS2—an overview

“…Following these proofs of concept, research had been focused mainly on thin-film heterojunctions. Except for a unique approach using a copper-tape substrate [3], the basic cell structure, the processes and materials used for back contact, buffer layer, and window layer are usually the same as those developed for the standard low-gap Cu(In,Ga)Se 2 -based cells. The most successful absorber preparation methods are multi-source evaporation and two-step (sulfurization of metal precursor films) processes.…”

Electronic Properties of Cu-In-S Solar Cells on Cu-Tape Substrate

“…The final and the longest stage is the annealing of the tape, which takes about 4 s under the atmospheric pressure of the N 2 gas. The fabrication technology of the absorber has been described in more detail by Penndorf et al [2] and it has been recently investigated by Winkler et al [6]. For the present study, we sorted out absorbers which show an asymmetrical diode-like I-V characteristic when contacted by a metal spring contact ("as-grown" cells).…”