Circularly polarized light emission from chiral spatially-structured planar semiconductor microcavities

Максимов, А. А.; Tartakovskii, I. I.; Filatov, E. V.; Lobanov, S. V.; Gippius, N. A.; Tikhodeev, S. G.; Schneider, Christian; Kamp, M.; Maier, Sebastian; Höfling, Sven; Kulakovskiĭ, V. D.

doi:10.1103/physrevb.89.045316

Cited by 58 publications

(53 citation statements)

References 18 publications

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“…4 for the right-twisted structure with the same parameters. The spectra were calculated using the reciprocity principle and the optical scattering matrix method [8,9]. Compared to Ref.…”

Section: Resultsmentioning

confidence: 99%

“…A significantly higher value of ρ c of QD emission (up to 70% in the direction normal to the structure plane and up to 81% at some angle) was experimentally achieved from a planar semiconductor microcavity with chiral partially etched top mirror [8], but this structure is far more complex. The degree of circular polarization of emission from a chiral structure made of achiral semiconductors depends strongly on its geometry and the radiation frequency, which allows one to optimize the structures.…”

Section: Introductionmentioning

confidence: 99%

“…The degree of circular polarization of emission from a chiral structure made of achiral semiconductors depends strongly on its geometry and the radiation frequency, which allows one to optimize the structures. Recent numerical simulations [8,9] show that values of ρ c as high as 98 and 99% in waveguide and microcavity structures, respectively, can be reached by their optimization.…”

Section: Introductionmentioning

confidence: 99%

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Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

et al. 2015

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We study the polarization properties of light emitted by quantum dots that are embedded in chiral photonic crystal structures made of achiral planar GaAs waveguides. A modification of the electromagnetic mode structure due to the chiral grating fabricated by partial etching of the waveguide layer has been shown to result in a high circular polarization degree ρ c of the quantum dot emission in the absence of external magnetic field. The physical nature of the phenomenon can be understood in terms of the reciprocity principle taking into account the structural symmetry. At the resonance wavelength, the magnitude of |ρ c | is predicted to exceed 98%. The experimentally achieved value of |ρ c | = 81% is smaller, which is due to the contribution of unpolarized light scattered by grating defects, thus breaking its periodicity. The achieved polarization degree estimated removing the unpolarized nonresonant background from the emission spectra can be estimated to be as high as 96%, close to the theoretical prediction.

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“…4 for the right-twisted structure with the same parameters. The spectra were calculated using the reciprocity principle and the optical scattering matrix method [8,9]. Compared to Ref.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

et al. 2015

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“…In particular, chiral photonic structures are known to demonstrate a giant optical activity, several orders of magnitude stronger than natural materials [4][5][6][7][8][9] . Recently, it has been demonstrated that incorporating a chiral photonic structure into a planar GaAs waveguide or a semiconductor microcavity (MC) with embedded lightemitting achiral InAs quantum dots (QD) allows to achieve highly circularly polarized light emission, without applying magnetic field and without the need of thick quarter-waveplates [10][11][12] . The effect is due to the modification of the symmetry and density of environmentally allowed electromagnetic modes relative to that in free space due to the chiral nanostructuring, which, in turn, affects the spontaneous emission rate, directional pattern, and polarization 13,14 .…”

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confidence: 99%

“…To optimize the chiral structures for obtaining a high degree of circular polarization degree (DCP) of light emission we have calculated the frequency dependence of emission in right and left circular polarizations, using the optical scattering matrix and Fourier modal method [10][11][12]18 . In this approximation the emission is calculated actually for homogeneously distributed oscillating point dipoles in the QW plane, which are driven by external excitation and emit incoherently, so that the intensities rather than the electromagnetic fields are summed up at the receiver.…”

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confidence: 99%

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Demenev

Kulakovskiĭ

Schneider

et al. 2016

Applied Physics Letters

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We report the elliptically, close to circularly polarized lasing at ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.PACS numbers: 71.36.+c, 42.65.Pc, 42.55.Sa Modern nanofabrication technologies allow to realize photonic structures -photonic crystals and metamaterials -with extraordinary optical properties 1-3 . In particular, chiral photonic structures are known to demonstrate a giant optical activity, several orders of magnitude stronger than natural materials 4-9 . Recently, it has been demonstrated that incorporating a chiral photonic structure into a planar GaAs waveguide or a semiconductor microcavity (MC) with embedded lightemitting achiral InAs quantum dots (QD) allows to achieve highly circularly polarized light emission, without applying magnetic field and without the need of thick quarter-waveplates 10-12 . The effect is due to the modification of the symmetry and density of environmentally allowed electromagnetic modes relative to that in free space due to the chiral nanostructuring, which, in turn, affects the spontaneous emission rate, directional pattern, and polarization 13,14 . This method has considerable advantages: small size, very simple operation, and compatibility with semiconductor fabrication process. In this Letter we demonstrate that the method works for the stimulated emission as well, and demonstrate a highly circularly polarized lasing from an AlGaAs/AlAs microcavity with chirally etched top Bragg mirror with GaAs quantum wells (QW) in the active cavity. To the best of our knowledge, previously the elliptically polarized lasing with a good degree of circular polarization with monolithic control of circular polarization was realized only on a quantum cascade laser in the THz range of frequencies 15 .A chiral photonic crystal (CPC) is fabricated from the AlAs/AlGaAs/GaAs high Q-factor MC grown by molecular beam epitaxy on a (001)-oriented GaAs. The full planar cavity consists of a lower and an upper Bragg reflectors with 27 and 23 pairs of AlAs/Al 0.20 Ga 0.80 As layers, respectively, with 3 nm GaAs smoothing layer after each pair in the Bragg reflectors and an active layer with three groups of four 13 nm GaAs QWs separated by 4 nm AlAs bariers. The nominal thicknesses of the AlAs and Al 0.20 Ga 0.80 As layers in Bragg mirrors are (68 ± 3) nm and (58 ± 3) nm, respectively. The Bragg pairs are deposited on the wafer with a slight wedge from the center to the circumference, resulting in a blueshift of the cavity resonance which can amount up to ≈200 meV.. It consists of the central group of four GaAs QWs with three AlAs barriers ...

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Tailoring MoS₂ Valley‐Polarized Photoluminescence with Super Chiral Near‐Field

et al. 2018

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Transition metal dichalcogenides with intrinsic spin-valley degrees of freedom hold great potentials for applications in spintronic and valleytronic devices. MoS monolayer possesses two inequivalent valleys in the Brillouin zone, with each valley coupling selectively with circularly polarized photons. The degree of valley polarization (DVP) is a parameter to characterize the purity of valley-polarized photoluminescence (PL) of MoS monolayer. Usually, the detected values of DVP in MoS monolayer show achiral property under optical excitation of opposite helicities due to reciprocal phonon-assisted intervalley scattering process. Here, it is reported that valley-polarized PL of MoS can be tailored through near-field interaction with plasmonic chiral metasurface. The resonant field of the chiral metasurface couples with valley-polarized excitons, and tailors the measured PL spectra in the far-field, resulting in observation of chiral DVP of MoS -metasurface under opposite helicities excitations. Valley-contrast PL in the chiral heterostructure is also observed when illuminated by linearly polarized light. The manipulation of valley-polarized PL in 2D materials using chiral metasurface represents a viable route toward valley-polaritonic devices.

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Circularly polarized light emission from chiral spatially-structured planar semiconductor microcavities

Cited by 58 publications

References 18 publications

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Tailoring MoS₂ Valley‐Polarized Photoluminescence with Super Chiral Near‐Field

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Circularly polarized light emission from chiral spatially-structured planar semiconductor microcavities

Cited by 58 publications

References 18 publications

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

Controlling circular polarization of light emitted by quantum dots using chiral photonic crystal slabs

Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

Tailoring MoS2 Valley‐Polarized Photoluminescence with Super Chiral Near‐Field

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Tailoring MoS₂ Valley‐Polarized Photoluminescence with Super Chiral Near‐Field