We report the elliptically, close to circularly polarized lasing at ω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.PACS numbers: 71.36.+c, 42.65.Pc, 42.55.Sa Modern nanofabrication technologies allow to realize photonic structures -photonic crystals and metamaterials -with extraordinary optical properties 1-3 . In particular, chiral photonic structures are known to demonstrate a giant optical activity, several orders of magnitude stronger than natural materials 4-9 . Recently, it has been demonstrated that incorporating a chiral photonic structure into a planar GaAs waveguide or a semiconductor microcavity (MC) with embedded lightemitting achiral InAs quantum dots (QD) allows to achieve highly circularly polarized light emission, without applying magnetic field and without the need of thick quarter-waveplates 10-12 . The effect is due to the modification of the symmetry and density of environmentally allowed electromagnetic modes relative to that in free space due to the chiral nanostructuring, which, in turn, affects the spontaneous emission rate, directional pattern, and polarization 13,14 . This method has considerable advantages: small size, very simple operation, and compatibility with semiconductor fabrication process. In this Letter we demonstrate that the method works for the stimulated emission as well, and demonstrate a highly circularly polarized lasing from an AlGaAs/AlAs microcavity with chirally etched top Bragg mirror with GaAs quantum wells (QW) in the active cavity. To the best of our knowledge, previously the elliptically polarized lasing with a good degree of circular polarization with monolithic control of circular polarization was realized only on a quantum cascade laser in the THz range of frequencies 15 .A chiral photonic crystal (CPC) is fabricated from the AlAs/AlGaAs/GaAs high Q-factor MC grown by molecular beam epitaxy on a (001)-oriented GaAs. The full planar cavity consists of a lower and an upper Bragg reflectors with 27 and 23 pairs of AlAs/Al 0.20 Ga 0.80 As layers, respectively, with 3 nm GaAs smoothing layer after each pair in the Bragg reflectors and an active layer with three groups of four 13 nm GaAs QWs separated by 4 nm AlAs bariers. The nominal thicknesses of the AlAs and Al 0.20 Ga 0.80 As layers in Bragg mirrors are (68 ± 3) nm and (58 ± 3) nm, respectively. The Bragg pairs are deposited on the wafer with a slight wedge from the center to the circumference, resulting in a blueshift of the cavity resonance which can amount up to ≈200 meV.. It consists of the central group of four GaAs QWs with three AlAs barriers ...