Circuit simulation of workload-dependent RTN and BTI based on trap kinetics

Camargo, Vinícius V. A.; Kaczer, B.; Wirth, Gilson

doi:10.1016/j.microrel.2014.06.003

Cited by 8 publications

(4 citation statements)

References 31 publications

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“…In state-of-the-art CMOS technology, defects are mostly found at the semiconductor-oxide interface, which are responsible for device level reliability issues, such as the bias temperature instability and random telegraph noise. 8,9 Further, subgap defects trigger nonradiative recombination mechanisms through phonon-assisted decay to the ground state. 10,11 In the case of hybrid perovskites, with phase transitions near room temperature 12 and weak lead-halide bonds, 13 careful management of fabrication conditions is essential to obtain high performance materials.…”

Section: ■ Introductionmentioning

confidence: 99%

“…The excellent performance of these polycrystalline semiconductors is surprising, because solution-based fabrication techniques typically result in crystal structures with a high density of defects when compared to melt-growth techniques. In state-of-the-art CMOS technology, defects are mostly found at the semiconductor-oxide interface, which are responsible for device level reliability issues, such as the bias temperature instability and random telegraph noise. , Further, subgap defects trigger nonradiative recombination mechanisms through phonon-assisted decay to the ground state. , In the case of hybrid perovskites, with phase transitions near room temperature and weak lead-halide bonds, careful management of fabrication conditions is essential to obtain high performance materials. − A detailed understanding of the nature of the defects, and their effect on the recombination dynamics of band states, is crucial to advance device performance toward the ultimate limits.…”

Section: Introductionmentioning

confidence: 99%

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Dark Subgap States in Metal-Halide Perovskites Revealed by Coherent Multidimensional Spectroscopy

et al. 2019

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Metal-halide perovskites show excellent properties for photovoltaic and optoelectronic applications, with power conversion efficiencies of solar cell and LEDs exceeding 20%. Being solution processed, these polycrystalline materials likely contain a large density of defects compared to melt-grown semiconductors. Surprisingly, typical effects from defects (absorption below the bandgap, low fill factor and open circuit voltage in devices, strong nonradiative recombination) are not observed. In this work, we study thin films of metal-halide perovskites CH3NH3PbX3 (X = Br, I) with ultrafast multidimensional optical spectroscopy to resolve the dynamics of band and defect states. We observe a shared ground state between the band-edge transitions and a continuum of sub-bandgap states, which extends at least 350 meV below the band edge). We explain the comparatively large bleaching of the dark sub-bandgap states with oscillator strength borrowing from the band-edge transition. Our results show that upon valence to conduction band excitation, such subgap states are instantaneously bleached for large parts of the carrier lifetime and conversely that most dark sub-bandgap states can be populated by light excitation. This observation helps to unravel the photophysical origin of the unexpected optoelectronic properties of these materials.

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Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dark Subgap States in Metal-Halide Perovskites Revealed by Coherent Multidimensional Spectroscopy

et al. 2019

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“…To demonstrate the robustness and uniqueness of Prob-PUF, we constructed the circuit with the structure proposed in Section D. The simulation flow for stochastic process of traps is adopted [22], wherein, the energy and spatial distributions of the trap measured in transistors are used [11]. 64 transistors are randomly selected, and the authentication process is repeated for 4 times.…”

Section: E Crp Space and Security Evaluationmentioning

confidence: 99%

A Probability-Based Strong Physical Unclonable Function With Strong Machine Learning Immunity

Xue

Ren

et al. 2022

IEEE Electron Device Lett.

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A novel strong physical unclonable function (PUF), called Probability-based PUF (Prob-PUF), is proposed using the stochastic process of trap emission in nano-scaled transistors. For the first time, the information of trap emission probability is used in the PUF design. This new approach offers ideal immunity to machine learning (ML) attacks. Since Prob-PUF only stores a mathematical model, it naturally avoids the dilemma between the requirement of a large number of challenge-response pairs (CRPs) and the limited storage space, making it a potential solution for future secure storage.

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“…Advanced digital-stress NBTI or random telegraph noise models [4][5][6][7][8][9] are based on capture-emission-time (CET) maps or otherwise exploit the fact that the stress voltage takes on only two values. In contrast, the continuous stress voltage levels of analog signals necessitate a more complex model that takes into account extensive information about the defect dynamics: The Markov two-state NBTI model [3] is based on a differential equation describing defect charging.…”

Section: Introductionmentioning

confidence: 99%

Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model

Giering

Rott

Rzepa³

et al. 2016

2016 IEEE International Reliability Physics Symposium (IRPS)

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We experimentally and theoretically investigate the NBTI degradation of pMOS devices due to analog stress voltages and thus go beyond existing NBTI studies for digital stress. As a result, we propose a physics-based compact model for analogstress NBTI which builds upon the extensive TCAD analysis of our ultra-short-delay experimental data. The numerical efficiency of the compact model allows its direct coupling to electric circuit simulators and permits to accurately account for NBTI degradation already during circuit design. Our model enables the calculation of the time-dependent NBTI variability of single device and of circuit performance parameters. We demonstrate our NBTI model on an operational amplifier and calculate the mean drift and variability of its offset voltage

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Circuit simulation of workload-dependent RTN and BTI based on trap kinetics

Cited by 8 publications

References 31 publications

Dark Subgap States in Metal-Halide Perovskites Revealed by Coherent Multidimensional Spectroscopy

Dark Subgap States in Metal-Halide Perovskites Revealed by Coherent Multidimensional Spectroscopy

A Probability-Based Strong Physical Unclonable Function With Strong Machine Learning Immunity

Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model

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