Circuit Models of Carbon-Based Interconnects for Nanopackaging

Chiariello, Andrea G.; Maffucci, Antonio; Miano, G.

doi:10.1109/tcpmt.2013.2262213

Cited by 35 publications

(27 citation statements)

References 47 publications

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“…For typical dimensions of the nano-interconnects for the 14 nm technology node and below, this assumption limits the model to a frequency up to some THz. Following the stream of what is done in [18,19,24], in such a condition, the electrodynamics of the π-electrons may be described by the quasi-classical Boltzmann equation. In the following, we start from the 2D case (graphene infinite layer) and then particularize the results to the 1D case (GNRs).…”

Section: Transport Modelmentioning

confidence: 99%

Electrical Properties of Graphene for Interconnect Applications

Maffucci

Miano²

2014

Applied Sciences

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A semi-classical electrodynamical model is derived to describe the electrical transport along graphene, based on the modified Boltzmann transport equation. The model is derived in the typical operating conditions predicted for future integrated circuits nano-interconnects, i.e., a low bias condition and an operating frequency up to 1 THz. A generalized non-local dispersive Ohm's law is derived, which can be regarded as the constitutive equation for the material. The behavior of the electrical conductivity is studied with reference to a 2D case (the infinite graphene layer) and a 1D case (the graphene nanoribbons). The modulation effects of the nanoribbons' size and chirality are highlighted, as well as the spatial dispersion introduced in the 2D case by the dyadic nature of the conductivity.

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Section: Transport Modelmentioning

confidence: 99%

Electrical Properties of Graphene for Interconnect Applications

Maffucci

Miano²

2014

Applied Sciences

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“…inductance matrix (which includes Lk only in the self terms) becomes diagonally dominant. This dominance depends on M, which in turns is related to the wire diameter and temperature [34][35][36]. In our case, at room temperature we pass from 20 ≈ M (for multiwall CNTs), to 2 ≈ M (for single-wall CNTs).…”

Section: A Electromagnetically Coupled Nano-interconnectsmentioning

confidence: 81%

“…Note that the number of conducting channels M strongly depends on the chirality, size and temperature [34]- [36].…”

Section: A Modeling Nanoscale Interconnectsmentioning

confidence: 99%

Nanoscale Electromagnetic Compatibility: Quantum Coupling and Matching in Nanocircuits

Slepyan¹,

Boag²,

Mordachev³

et al. 2015

IEEE Trans. Electromagn. Compat.

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Abstract-The paper investigates two typical electromagnetic compatibility (EMC) problems, namely, coupling and matching in nanoscale circuits composed of nano-interconnects and quantum devices in entangled state. Nano-interconnects under consideration are implemented by using carbon nanotubes or metallic nanowires, while quantum devices -by semiconductor quantum dots. Equivalent circuits of such nanocircuits contain additional elements arising at nanoscale due to quantum effects. As a result, the notions of coupling and impedance matching are reconsidered. Two examples are studied: in the first one, electromagnetically coupled nanowires are connected to classical lumped devices; in the second one, electromagnetically uncoupled transmission lines are terminated on quantum devices in entangled states. In both circuits the EMC features qualitatively and quantitatively differ from their classical analogs. In the second example, we demonstrate the existence of quantum coupling, due to the entanglement, which exists in spite of the absence of classical electromagnetic coupling. The entanglement also modifies the matching condition introducing a dependence of the optimal value of load impedance on the line length.Index Terms -Electromagnetic compatibility, kinetic inductance, nano-circuits, nano-electromagnetism, quantum devices, quantum entanglement. I. INTRODUCTIONODAY's achievements of nanoelectronics allow utilization and manipulation of small collections of atoms and molecules, such as semiconductor heterostructures, quantum wells, quantum wires and quantum dots [1][2][3] radiation with quantum mechanical low-dimensional systems.One of the crucial aspects of electromagnetism for electronic devices and systems is related to their electromagnetic compatibility, i.e., of their ability to operate successfully, with controlled levels of emissions and with a suitable degree of robustness to unwanted electromagnetic couplings via various mechanisms of interference [12][13][14].However, with the transition of electronics to nanoscale new physical phenomena as well as new materials' properties need to be studied. Quantum effects, such as: discrete energy spectrum of charge carriers, existence of phonons, ballistic transport and tunneling, many-body correlations, interface effects, and so on, manifest themselves jointly with classical electromagnetic interactions [15][16]. As a result, the classical design based on the phenomenological separate analysis of physical properties of electric circuit elements and functional properties of devices and systems becomes invalid with respect to nanoelectronics. These considerations lead to the conclusion that the "classical" EMC, completely based on macroscopic electrodynamics, must be deeply revised starting from the basic concepts and opening the era of "nanoEMC" [17][18][19].For instance, the classical scaling rules used to design integrated circuits (ICs) and to implement EMC solutions are based on the macroscopic behavior of the electrical parameters, such as inductances and capa...

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“…In view of studying the electrical properties of the GNR contact, we must include the effect of an external field in the electrodynamic model of the electrical transport along the z-axis of the multilayered structure in Figure 1b. This is will be done in this section by extending the model presented in [25][26][27][28]. To this end, we will start with a brief review of the transport model presented in the above references; then, we extend it to include the tunneling effect.…”

Section: Electrical Response Of a Bi-layer Graphene Nanoribbon Thz Dementioning

confidence: 99%

“…The transport model presented in [25][26][27][28] is based on the knowledge of the band structure of the GNRs, which can be expressed in terms of the energy dispersion relation of the conduction electrons (the so-called π-electrons) in graphene [29]: [ ]…”

Section: A Glimpse At the Graphene Nanoribbon Band Structurementioning

confidence: 99%

A New Mechanism for THz Detection Based on the Tunneling Effect in Bi-Layer Graphene Nanoribbons

Maffucci

2015

Applied Sciences

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Abstract:A new possible mechanism of signal detection in the THz range is investigated, based on the excitation of resonances due to the tunneling effect between two graphene nanoribbons. A simple detector is proposed, where two graphene nanoribbons are used to contact two copper electrodes. The terminal voltages are shown to exhibit strong resonances when the frequency of an external impinging field is tuned to the characteristic tunneling frequency of the graphene layer pair. An electrodynamic model for the electron transport along the graphene nanoribbons is extended here to include the tunneling effect, and a coupled transmission line model is finally derived. This model is able to predict not only the tunneling resonance, but also the well-known plasmon resonances, related to the propagation of slow surface waves.

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Circuit Models of Carbon-Based Interconnects for Nanopackaging

Cited by 35 publications

References 47 publications

Electrical Properties of Graphene for Interconnect Applications

Electrical Properties of Graphene for Interconnect Applications

Nanoscale Electromagnetic Compatibility: Quantum Coupling and Matching in Nanocircuits

A New Mechanism for THz Detection Based on the Tunneling Effect in Bi-Layer Graphene Nanoribbons

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