Circuit Model for Double-Energy-Level Trap Centers in GaN HEMTs

Albahrani, Sayed Ali; Parker, Anthony E.; Heimlich, Michael

doi:10.1109/ted.2017.2650241

Cited by 3 publications

(1 citation statement)

References 23 publications

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“…However, the already built-in trap model lacks an important feature of traps, the difference between time constants of two events, capture and emission of electrons. The closest approach to a trap's behavior is described by the Shockley-Read-Hall (SRH) recombination [15, 16] and therefore some trap models have been developed in order to simulate trapping effects in ASM-HEMT according to physics [17, 18], showing a good agreement with experimental results. However, the employment of the above theory in compact modeling conduces to a complicated extraction procedure due to the introduction of additional parameters that properly manage the feedback from the respective sub-circuit.…”

Section: Introductionmentioning

confidence: 99%

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Beleniotis

Schnieder

Krause

et al. 2021

Int. J. Microw. Wireless Technol.

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Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance.

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Section: Introductionmentioning

confidence: 99%

An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT

Beleniotis

Schnieder

Krause

et al. 2021

Int. J. Microw. Wireless Technol.

View full text Add to dashboard Cite

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Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper)

Mao,

Su,

et al. 2024

Int J Numerical Modelling

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The compact model plays a pivotal role as a critical link between device fabrication and circuit design. While conventional compact model theories and techniques are generally mature, the intricate physical mechanisms of gallium nitride (GaN) high‐electron mobility transistors (HEMTs) pose challenges due to their strong non‐linearity in high‐power radio frequency (RF) applications. This complexity hinders achieving the required precision for applications using traditional modeling methods. Therefore, the development of physics‐based compact modeling techniques becomes crucial for a deeper understanding of the intricate features of GaN HEMTs. This paper explores the advancements and the current state‐of‐the‐art in physics‐based compact models. The comprehensive review covers both intrinsic core models and real‐device effects models. Core models are presented with a focus on fundamental concepts, development overviews, and applications. Additionally, the real‐device effects models are introduced, encompassing advanced characterization techniques and modeling methodologies. Furthermore, the paper outlines future trends in physics‐based compact modeling, providing valuable insights for individuals engaged in transistor compact modeling work.

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