Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS

Komawaki, Takuya; Yabuuchi, Michitarou; Kishida, Reiji; Furuta, Jun; Matsumoto, Takashi; Kobayashi, Kazutoshi

doi:10.1109/icicdt.2017.7993526

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…This agrees well with the 3D atomic simulation results by assuming different distances between individual traps in the dielectric and the percolation path in the channel induced by the non-uniform doping [23]. Since the standard RTN test measures ΔID/ID0 close to threshold region, this result suggests that the time-dependent variation could be overestimated [24]. Therefore, the measurement of the entire ID-VG under the RTN condition is essential.…”

Section: Applications To Rtn Study In Nano-scaled Devicesupporting

confidence: 84%

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Zhan

Shen

et al. 2019

IEEE Electron Device Lett.

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A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n-and p-FETs.

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Section: Applications To Rtn Study In Nano-scaled Devicesupporting

confidence: 84%

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Zhan

Shen

et al. 2019

IEEE Electron Device Lett.

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“…These effects are often grouped under the heading of excess noise in experimental studies [110,111]. As the localized states can be interpreted as traps, the fluctuations often appear as trapping/detrapping effects [112][113][114]. And, often the fluctuations are coupled to those from the random interface potential due to surface roughness [115].…”

Section: Discrete Impuritiesmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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A security oriented transient-noise simulation methodology: Evaluation of intrinsic physical noise of cryptographic designs

et al. 2019

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Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS

Cited by 5 publications

References 12 publications

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A review of quantum transport in field-effect transistors

A security oriented transient-noise simulation methodology: Evaluation of intrinsic physical noise of cryptographic designs

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Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS

Cited by 5 publications

References 12 publications

A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A review of quantum transport in field-effect transistors

A security oriented transient-noise simulation methodology: Evaluation of intrinsic physical noise of cryptographic designs

Contact Info

Product

Resources

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A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition