Circuit Level Layout Optimization of MOS Transistor for RF and Noise Performance Improvements

Jeon, Jongwook; Kang, Myounggon

doi:10.1109/ted.2016.2614275

Cited by 8 publications

(6 citation statements)

References 6 publications

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“…As shown in Figure 8, the type B transistor can realize the highest g m , which indicates that a low NF min can be realized. 33 The high g m , moderate C gs , and C gd with low r g also contribute to a high f T and f max as shown in Equations 1 and 2.…”

Section: Mm-wave Transistor-layout Techniques For Wideband Lnamentioning

confidence: 96%

“…The input matching network with three-coil transformer different performances, which can be used in different applications. [33][34][35][36] The gate contacting stacks can be generally divided into two types, the single-end type, and the double-end type. In the single-end type, the gate path is connected from a single-end of the poly-gate to the top or subtop metal layer by contacts and metal vias, 34 while in double-end type, both ends of the poly-gate are connected out in parallel.…”

Section: Mm-wave Transistor-layout Techniques For Wideband Lnamentioning

confidence: 99%

“…For parallel feeding, the distances from each transistor finger to the overall drain are the same. 33 For series feeding, the signal path lengths from each finger to the overall drain are different. 36 Figure 6 illustrates four representative layout drawings consisting of double-end gate contact with parallel feeding (type A), double-end gate contact with series feeding (type B), single-end gate contact with parallel feeding (type C), and single-end gate contact with series feeding (type D).…”

Section: Mm-wave Transistor-layout Techniques For Wideband Lnamentioning

confidence: 99%

“…NF min is the minimum NF that a circuit can achieve. In Jeon and Kang, 33 an expression of NF min is given, which shows that high g m , low C gs , and low C gd are needed to realize low NF min .…”

Section: Design Considerationsmentioning

confidence: 99%

“…The transistor is usually configured as a CS structure in an mm‐Wave amplifier; thus, the source terminal is usually grounded nearby. Considering the routing of gate and drain terminals, there are several typical layout drawings with different performances, which can be used in different applications 33–36 . The gate contacting stacks can be generally divided into two types, the single‐end type, and the double‐end type.…”

Section: Design Considerationsmentioning

confidence: 99%

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A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

Wei

Zhang

et al. 2022

Circuit Theory & Apps

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In this paper, a broadband superheterodyne receiver (RX) front-end for millimeter-wave (mm-Wave) imaging radar is presented. Realized in 28-nm CMOS technology, the proposed RX incorporates a wideband low-noise amplifier (LNA), double-balanced passive mixers for the dual down-conversion, a differential power divider, a differential intermediate frequency filters, a current-mode-logic divider-by-2, and a local oscillator buffers. Wideband technique and layout optimization are taken into consideration in the RX. A fourstage LNA is devised to realize the high gain and low noise figure (NF) with a common-gate input stage and three pseudodifferential common-source stages.Optimized transistor layout and capacitor neutralization technique are developed to improve gain and noise performance. Transformer-based matching networks with the peak-staggered technique are adopted in the LNA to achieve a flatter gain response with a wider bandwidth (BW). The passive double-balanced mixers are implemented with a highly symmetrical layout for broadband down-conversion. Simulation results show that the mm-Wave RX front-end exhibits a BW ranging from 90 to 115 GHz. The simulated NF of our RX is 4.7 dB at 86 GHz. With a supply voltage of 1 V, the presented RX consumes 88.2-mW power and occupies a chip size of 1.6 Â 0.5 mm 2 including all the testing pads. The proposed RX is suitable for W-band imaging systems.

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Section: Mm-wave Transistor-layout Techniques For Wideband Lnamentioning

confidence: 96%