2007
DOI: 10.1109/vts.2007.22
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Circuit Failure Prediction and Its Application to Transistor Aging

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Cited by 372 publications
(196 citation statements)
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“…Figure 8 shows our simulation results on ISCAS'85, IS-CAS'89, and ITC'99 benchmarks regarding the gates that cannot be characterized by using delay as the side channel due to reconvergences. The only possibility to conduct delay characterization is that there is no reconvergence from a specific input to a specific output in the design 1 . We observe that there is a large number of the gates (at least 40%) that are subject to reconvergences and thus are uncharacterizable using non-destructive delay measurements, leaving a large portion of the circuit under the risk of HT insertion.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 8 shows our simulation results on ISCAS'85, IS-CAS'89, and ITC'99 benchmarks regarding the gates that cannot be characterized by using delay as the side channel due to reconvergences. The only possibility to conduct delay characterization is that there is no reconvergence from a specific input to a specific output in the design 1 . We observe that there is a large number of the gates (at least 40%) that are subject to reconvergences and thus are uncharacterizable using non-destructive delay measurements, leaving a large portion of the circuit under the risk of HT insertion.…”
Section: Resultsmentioning
confidence: 99%
“…For example, aging can increase delay by 10% and leakage energy by several times [1]. For the discussion in this paper, we refer to the NBTI aging model presented by Chakravarthi et al [13], as shown in the Equation (5):…”
Section: Ic Aging Modelmentioning
confidence: 99%
“…These phenomena are causing significant alterations of both delay and leakage char acteristics of a gate. For example, aging can increase delay by 10% and leakage energy by several times [18]. Currently, aging has been assumed as having a detrimental impact on IC performance.…”
Section: Ic Agingmentioning
confidence: 99%
“…Some works have attempted to overcome this by using a worst-case stress probability of 0.95 instead of 1.0 on each gate [10], but this is purely empirical. Precise aging information is only obtainable from expensive postsilicon aging measurements performed directly on the circuit [12]- [14] instead of using surrogate sensors. The objective of this work is to build an efficient and precise scheme for diagnosing circuit delay degradation due to aging.…”
Section: Introductionmentioning
confidence: 99%