CIP spin torque effect in the spin valve pinned with an oxide antiferromagnetic layer

Co/Nb/Co trilayers as efficient cryogenic spin valves and supercurrent switches: the relevance to the standard giant and tunnel magnetoresistance effects

“…In the case of GMR and TMR effects, the unique magnetoresistance performance of the respective TLs FM/NM/ FM (of order 5.0% [32,33,[57][58][59] at room temperature and 6.0% [57,58] at cryogenic conditions) and FM/IN/FM (170% [34,36,60] at room temperature and 320% [34,35,60] at cryogenic conditions) can be used in both read heads and MRAM units for the reading and storage of binary information, respectively [38][39][40][41][42][43]. In more complicated FM/NM and FM/IN multilayers the GMR and TMR effects attain even higher values of up to 30% [61] and 308% [62,63], respectively, for operation at room temperature, while it reaches 80% [31] and 480% [62,63] for operation at cryogenic conditions, respectively.…”