Choice of the scattering carrier in Monte Carlo treatments of carrier-carrier scattering

Sadra, K.; Maziar, C.M.; Streetman, B. G.

doi:10.1049/ip-i-1.1988.0021

Cited by 4 publications

(5 citation statements)

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“…As discussed before, i th is proportional to drift velocity and hence the mobility of the carriers [54]. It is well known that the mobility of electrons in Si is almost 3 times more than that of holes [55]. So, the obtained ratio of i th e 1 /i th h 1 ∼ 3 seems reasonable.…”

Section: Fitting With Experimental Resultsmentioning

confidence: 69%

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Chakrabarty¹,

Das²,

Hossain³

2022

J. Phys. D: Appl. Phys.

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Photo-enhanced hysteretic I-V curves have been observed under reverse bias in a p-i-n structure containing electrochemically etched nanostructured silicon (Si) sandwiched between p-Si and n-type a-Si:H layers. These curves have been found to depend on intensity of incident illumination and structural morphology of the nanostructured Si layer. The conductance in trace path is lower than that in retrace path. Charge transport mechanism in this structure has been interpreted using microscopic description of charge trapping and detrapping in the defect states present at the interface of nanocrystalline silicon core and oxide shell in the active layer. An applied voltage dependent probability distribution of trapping and detrapping has been calculated in light of classical random walk problem. The trapping/detrapping of charges leading to development/destruction of potential barriers in the path of charge flow shows an analogy with the river bed deposition/erosion. The rate of trapping has been considered to depend on the empty defect states whereas the rate of detrapping depends on the already filled defects. Moreover, the rate of both trapping and detrapping is expected to depend on the charge flow rate. All these considerations lead the I-V relations for trace and retrace paths in reverse bias fitting nicely with experimental I-V loops. The observed peaks in the voltage dependent dynamic conductance in trace and retrace paths have been explained as a consequence of development and destruction of two barriers in the active layer for electrons and holes separately. Best fit values of the fitting parameters indicates that the trace path is dominated by holes whereas the retrace path is dominated by electronic transport. The difference in mobility of electron and hole leads to different trapping and detrapping rates in the two paths resulting in the observed hysteresis.

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Section: Fitting With Experimental Resultsmentioning

confidence: 69%

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Chakrabarty¹,

Das²,

Hossain³

2022

J. Phys. D: Appl. Phys.

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“…The transport coefficients will be calculated within n-type material under the following conditions: there are no acceptors in the sample (N A = 0); the equilibrium electron concentration is equal to the donor concentration (N D = n 0 ). The intrinsic concentration n i and the width of the bandgap of silicon are calculated by the following formulas [23][24][25]…”

Section: Transport Coefficients Calculationsmentioning

confidence: 99%

The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers

Kamegni¹,

Lashkevych²

2023

Semicond. Sci. Technol.

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In the common thermoelectric theory, minority charge carriers are assumed to be absent in n- or p-type thermoelectric materials. This study considers their presence and evaluates the effects of that presence on the thermo-electromotive force (Thermo-E.M.F.) of a non-degenerate n-type semiconductor. The calculations are done in the case of silicon. The contribution due to the presence of the minority holes to the total Thermo-E.M.F. depends on the thermopower of minority carriers, their electrical and thermal conductivities. It also depends on their bulk and surface recombinations and depends on the majority carriers only through their thermal and electrical conductivities. In the case of silicon, that contribution remains generally very low although it can increase or decrease the total Thermo-E.M.F. depending on the concentration of the doping elements, the bulk and surface recombination rates, and the length of the sample.

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“…In semiconductors, the total current density, a sum of electron and hole currents each containing both diffusion and drift components, is [13]…”

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confidence: 99%

“…It indicates that the drift field is suppressed by the internal Dember field on the basis of the external applied field and the direction of 𝜉 𝐷 is opposite to that of 𝜉 or 𝜉 𝑎 , in the positive direction of the 𝑥-axis. Besides the drift-current component determined by the above drift field, each of the electron and hole currents contains a diffusion-current component, namely [13] 𝐽 𝑛…”

mentioning

confidence: 99%

Suppression of the Drift Field in the p-Type Quasineutral Region of a Semiconductor p—n Junction

Cai¹,

Yang²,

Wei³

2012

Chinese Phys. Lett.

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An improved analytical model of the drift field suppressed by the Dember field due to ambipolar diffusion in the p-type quasineutral region (p-QNR) of a forward silicon p—n junction at low injection levels is presented with a good fit to the numerical simulation results. Considering ambipolar transport of both carriers, the diode current in the p-QNR is found to consist of a minority-electron diffusion-current component and majority-hole drift-and diffusion-current components, and the Dember field plays a dominant role in balancing all the components mentioned above to keep the current constant. The analytical model is beneficial to completely understand ambipolar current transport mechanisms in semiconductor p—n junction devices.

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Choice of the scattering carrier in Monte Carlo treatments of carrier-carrier scattering

Cited by 4 publications

References 0 publications

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

Origin of photo-enhanced hysteretic electrical conductance in nanostructured silicon-based heterojunction

The thermo-E.M.F. of an n-type silicon: assessment of the contribution due to the presence of minority carriers

Suppression of the Drift Field in the p-Type Quasineutral Region of a Semiconductor p—n Junction

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