Chlorine Radical Doping of a Few Layer Graphene with Low Damage

Abstract

We present a graphene plasma doping method using chlorine radicals generated in an inductively coupled plasma (ICP) with a double mesh grid system. Raman spectroscopy and sheet resistance measurement showed that this doping method is non-destructive and controllable approach for the p-type graphene layer doping method. And, by using a chlorine trap-doping method, the sheet resistance could be decreased to 76% at an optimized condition for the tri-layer graphene.

A Library of Doped-Graphene Images via Transmission Electron Microscopy

“…The dry doping of graphene by low energy plasmas is an interesting, new, damage-free method [19][20][21][22][23][24]. The method could be applied to other plasma systems such as neutral beams or ion beams.…”

Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects

“…From a different perspective, plasma doping is emerging as a promising option for layer‐by‐layer stacking of heterostructural hybrid materials by controlling the plasma species, plasma doping concentration, plasma power, and treatment time. This is accomplished without damage from ion bombardment or the formation of defects or disorders on the MoS 2 structure using low energy radical doping and has been applied successfully for graphene doping with plasma, by using cyclic trapped plasma doping . Moreover, the plasma‐assisted doping technique is a very easy scale‐up and mass‐production technique.…”

Plasma-Related Graphene Etching: a Mini-Review

“…By the mechanical graphite exfoliation utilizing the scotch tape in 2004 [1,2], an ultrathin graphene layer has discovered and emerged as the most promising nano-sized material with the amazing electronic properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17]. Unfortunately, the conductive graphene with gapless characteristics limited its novel physical and chemical properties.…”