Chip-Level Performance Maximization Using ASIS (Application-Specific Interconnect Structure) Wiring Design Concept for 45 nm CMOS Generation

Oda, Noriaki; Imura, H.; Kawahara, N.; Tsuji, Masayoshi; Kunishima, H.; Sone, S.; Ohnishi, S.; Yamada, Kazuhiko; Kakuhara, Y.; Sekine, Makoto; Hayashi, Y.; Ueno, Kazuyoshi

doi:10.1093/ietele/e90-c.4.848

Cited by 4 publications

(1 citation statement)

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“…The performance of large-scale integrated circuits (LSIs) is limited by increasing interconnect capacitance and resistance, with the continuous scaling down of LSI feature size, resulting in large propagation delay time and power dissipation. [1][2][3][4] Concerning interconnect materials, a copper (Cu) interconnect with low resistivity and various kinds of dielectric materials with low dielectric constant (low-k) have been realized. In the scaled-down LSIs of below the 45 nm node, the increasing interconnect resistance and the reliability degradation due to higher current density are the main issues.…”

Section: Introductionmentioning

confidence: 99%

Novel Air-gap Formation Technology Using Ru Barrier Metal for Cu Interconnects with High Reliability and Low Capacitance

Takigawa¹,

Tarumi²,

Shiohara³

et al. 2011

Jpn. J. Appl. Phys.

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A novel technology for obtaining low-capacitance Cu interconnects with air gaps has been proposed. Using a Ru barrier metal as a self-mask, a Cu interconnect was effectively protected from losing its cross-sectional shape during the intermetal dielectric etching process. The wiring capacitance with air-gaps was about 30% lower than that of the conventional low-k (k = 2.65)/Cu structure without air-gaps. The time-dependent dielectric breakdown (TDDB) lifetime of the air-gap interconnect with a Ru barrier was 100 times longer than that of the low-k/Cu structure. These results indicate that an air-gap interconnect with a Ru barrier metal can be an effective solution to boost the circuit operating speed and to reduce the power dissipation without the degradation of interconnect reliability for devices of 45 nm nodes and beyond.

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Section: Introductionmentioning

confidence: 99%