Chemomechanical Polishing of Silicon Carbide

Zhou, Lu; Audurier, V.; Pirouz, Pirouz; Powell, J. A.

doi:10.1149/1.1837711

Cited by 188 publications

(92 citation statements)

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“…Generally, both bulk and epitaxial growth are highly dependent on the surface quality of the starting material [4]. The substrate surface damages can affect the epilayer quality by introducing several different kinds of extended defects [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

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A study of the in-situ surface preparation has been performed for both Si-and C-face 4H-SiC nominally on-axis samples. The surface was studied after etching under C-rich, Si-rich and under pure hydrogen ambient conditions at the same temperature, pressure and time interval using a hot-wall chemical vapor deposition reactor. The surfaces of all the samples were analyzed using optical microscopy with Normarski diffractional interference contrast and atomic force microscopy with tapping mode before and after in-situ etching. Polishing related damages were found to be removed under all etching conditions, also the surface step structure was uncovered and a few defect-selective etch pits were observed. For the Si-face sample, the best surface morphology was obtained after Si-rich etching conditions with more uniform and small macro-step height which resulted in the lowest surface roughness. For the C-face sample the surface morphology was comparable under all etching conditions and not much difference was found except for the etching rate. Si droplets were not observed under any etching conditions.

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Section: Introductionmentioning

confidence: 99%

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Hassan

Bergman

Henry

et al. 2008

Journal of Crystal Growth

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“…By substituting the reciprocal of the normalized current with the normalized solution resistance, as stated in equation [2], equation [5] becomes…”

Section: Ecs Transactions 29 (1) 3-11 (2010)mentioning

confidence: 99%

“…Different approaches for measuring the impedance locally have been developed. Pioneering work to establish the so-called Localized Electrochemical Impedance Spectroscopy (LEIS) has been performed by Isaacs and co-workers (3)(4)(5), which combines the principles of EIS with a scanning system. More recently, a scanning droplet cell was proposed for LEIS (6,7).…”

Section: Introductionmentioning

confidence: 99%

Localized Impedance Measurements in Different Redox Potential Metals and their Galvanic Coupling by using AC-SECM

Estrada‐Vargas¹,

Casillas²,

Hernández-Gaitán³

et al. 2010

ECS Trans.

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In recent years, the use of Scanning Electrochemical Microscopy in its Alternating Current mode (AC-SECM) has increased due to its capability for detecting and interpreting local variations of electrochemical properties on surfaces with high spatial resolution. In this paper, we intend to extend the applications of AC-SECM for identifying local impedance variations on surfaces of materials with different redox potential, immersed in resistive media such as tequila in presence of supporting electrolyte. Preliminary results are promising since it is possible to visualize boundaries of materials with different redox potential by means of localized impedance measurements, which opens a new perspective for studying composite materials such as minerals.

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“…Many methods for processing RB-SiC were presented, such as chemical mechanical polishing [4], electro-chemical mechanical polishing [5] and plasma-assisted polishing [6]. But these methods still may leave damage and scratch on the surface.…”

Section: Introductionmentioning

confidence: 99%

Study on Indentation Experiments and Mechanical Behavior of RB-SiC

et al. 2017

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Abstract. In this work, we studied on the mechanical behavior of RB-SiC by the indentation experiments. The Vickers hardness tester and the laser scanning confocal microscope are used to process and observe the RB-SiC sample pieces. The indentations result shows that the hardness at the Si phase is lower than the SiC phase, thus it is easier to remove the Si than SiC. The morphology of indentations are complicated, there were no accumulation phenomenon at indentation edge. When the loading was 0.1kgf, 0.2kgf and 0.3kgf, only the radical cracking can be observed and the cracking was not obvious at Si and SiC mixed phase. Avalanche crushed phenomenon occurred when the load increased to 0.4kgf. According to the Evans' fracture toughness formula, the fracture toughness of SiC phase is about 2.5MPam 1/2 , and the fracture toughness of Si-SiC mixed phase is bigger than 3.0 MPam 1/2 . The critical cutting depth (dc) of RB-SiC was calculated by empirical formula presented by T. G. Bifano, and the value is 22.54nm.

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Chemomechanical Polishing of Silicon Carbide

Cited by 188 publications

References 0 publications

In-situ surface preparation of nominally on-axis 4H-SiC substrates

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Localized Impedance Measurements in Different Redox Potential Metals and their Galvanic Coupling by using AC-SECM

Study on Indentation Experiments and Mechanical Behavior of RB-SiC

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