Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents

McMeekin, Scott G.; Robertson, Max; McGhee, Laurence; Winfield, John M.

doi:10.1039/jm9920200367

Cited by 6 publications

(2 citation statements)

References 4 publications

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“…There are several reports on the CMP of GaAs using slurries that contain oxidizers such as hydrogen peroxide (H 2 O 2 ), sodium hypochlorite (NaOCl), and dibromine (Br 2 ). [6][7][8][9] McGhee et al 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface.…”

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confidence: 99%

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Matovu

Ong

Leunissen

et al. 2013

ECS J. Solid State Sci. Technol.

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The fabrication of InGaAs n-channels in CMOS devices requires an intervening buffer layer of GaAs or InP between a Si substrate and the InGaAs channel layer, which has to be planarized to enable the growth of a channel that is free of defects due to uneven surface topography. This report discusses the material removal rates (RRs) and AsH 3 evolution observed during chemical mechanical polishing (CMP) of GaAs using aq. solutions of hydrogen peroxide (H 2 O 2 ) and silica slurries containing H 2 O 2 . GaAs RRs were negligible with deionized water or with silica slurries alone. They were relatively high in aq. solutions of H 2 O 2 alone and showed a strong pH-dependence, with significantly higher RRs in the alkaline region. The addition of silica particles to aq. H 2 O 2 did not increase the GaAs RRs significantly. The evolution of arsenic trihydride (AsH 3 ) during the dissolution of GaAs in aq. H 2 O 2 solution was similarly higher in the basic pH range than in neutral pH or in the acidic pH range. However, no AsH 3 was measured during polishing, evidently because of the relatively high water solubility of AsH 3 . In this report, GaAs removal rates and AsH 3 formation are analyzed using data from contact angle measurements, X-Ray photoelectron spectroscopy (XPS), and X-Ray fluorescence (XRF) spectroscopy. Reaction pathways leading to material removal are proposed.The quest for faster devices in the microelectronic industry has renewed interest in III-V materials such as InP, GaAs, and InGaAs as n-channel candidates because of their high electron mobility. 1,2 During the fabrication of n-channels in CMOS devices, chemical mechanical polishing (CMP) of these materials is required to achieve a smooth and planar surface to enable further processing. There are several environmental health and safety (EHS) issues associated with polishing and wet processing of these III-V materials. 2-5 The EHS concerns for As containing materials include the evolution of toxic arsenic trihydride (AsH 3 ) gas, and the handling of arsenic contaminated slurry waste and used consumables (e.g., polishing pads). For InP, the major concern has been the generation of toxic phosphine gas during polishing. 3,4 In this work, the focus is on the chemical mechanical polishing of GaAs and evolution of AsH 3 .There are several reports on the CMP of GaAs using slurries that contain oxidizers such as hydrogen peroxide (H 2 O 2 ), sodium hypochlorite (NaOCl), and dibromine (Br 2 ). 6-9 McGhee et al. 6 proposed a three step mechanism for GaAs removal in an aqueous solution containing H 2 O 2 and ammonia. An oxohydroxyl layer, consisting of sparingly soluble oxohydroxides of Ga and As, was first formed on the surface. These oxohydroxides were converted to soluble species upon complexation with aq. NH 3 . The soluble species were then removed from the surface by mechanical wiping. In Br 2 -MeOH solutions, they proposed that an adsorbed Br layer was formed on the GaAs surface. The adsorption of bromine was followed by a redox reaction, which continued as lo...

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confidence: 99%

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Matovu

Ong

Leunissen

et al. 2013

ECS J. Solid State Sci. Technol.

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“…Ultraprecision multiplex 2D or 3D free-form nanostructures are often required on GaAs devices, such as radio frequency power amplifiers and switches used in 5G smart mobile wireless communications [13][14][15]. Currently, lapping [16,17] and chemical-mechanical polishing [18][19][20][21] have been employed to successfully fabricate planar GaAs wafers. However, they are not competent for the fabrication of 2D or 3D nanostructures.…”

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confidence: 99%

A Simulated Investigation of Ductile Response of GaAs in Single-Point Diamond Turning and Experimental Validation

et al. 2020

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In this paper, molecular dynamic (MD) simulation was adopted to study the ductile response of single-crystal GaAs during single-point diamond turning (SPDT). The variations of cutting temperature, coordination number, and cutting forces were revealed through MD simulations. SPDT experiment was also carried out to qualitatively validate MD simulation model from the aspects of normal cutting force. The simulation results show that the fundamental reason for ductile response of GaAs during SPDT is phase transition from a perfect zinc blende structure (GaAs-I) to a rock-salt structure (GaAs-II) under high pressure. Finally, a strong anisotropic machinability of GaAs was also found through MD simulations.

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ChemInform Abstract: Chemomechanical Polishing of Gallium Arsenide to Subnanometre Surface Finish. An Evaluation of Hydrogen Peroxide and Dibromine as Reagents.

McMeekin¹,

Robertson²,

McGhee³

et al. 1992

ChemInform

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Chemomechanical polishing of gallium arsenide to subnanometre surface finish. An evaluation of hydrogen peroxide and dibromine as reagents

Abstract: Hydrogen peroxide is an effective chemical polish for gallium arsenide in the pH range 6-8.5. The polished gallium arsenide surface has a surface roughness of <1 nm and is superior to that obtained from polishing with dibromine-methanol solutions.

Cited by 6 publications

References 4 publications

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

Fundamental Investigation of Chemical Mechanical Polishing of GaAs in Silica Dispersions: Material Removal and Arsenic Trihydride Formation Pathways

A Simulated Investigation of Ductile Response of GaAs in Single-Point Diamond Turning and Experimental Validation

ChemInform Abstract: Chemomechanical Polishing of Gallium Arsenide to Subnanometre Surface Finish. An Evaluation of Hydrogen Peroxide and Dibromine as Reagents.

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