Chemomechanical Polishing Effects on the Room Temperature Photoluminescence of Bulk ZnO: Exciton–LO Phonon Interaction

Lucca, DA; Hamby, D. W.; Klopfstein, M.J.; Cantwell, G.

doi:10.1002/1521-3951(200201)229:2<845::aid-pssb845>3.3.co;2-v

Cited by 7 publications

(8 citation statements)

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“…From the PL spectra NBE transition‐related emission band (B1) is observed along with another band B2 at around 390 nm. The emission of ZnO nano structures may consists of LO‐phonon (~574 cm −1 ) replicas occur with a separation of the LO‐phonon energy (~71 meV) from NBE . Thus, the emission band B2 is assigned to the LO‐phonon replica of the NBE peak.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Fluorescence and Local Vibrational Mode in Near‐White‐Light‐Emitting ZnO:Mg Nanorods System

Udayabhaskar

Karthikeyan

2015

J. Am. Ceram. Soc.

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We report exciton and phonon properties of ZnO:Mg nanorods of different Mg doping concentration. X-ray diffraction studies (XRD) confirm the growth of wurtzite phase ZnO nanostructures. XRD reveals doping-induced shift in peaks and formation of secondary phase related to Mg. Optical properties of the prepared nanorods are investigated by using UV-Visible absorption and photoluminescence spectroscopic techniques. Optical absorption studies show strong free excitonic absorption of ZnO and extra absorption bands related to the defect centers of the secondary phase (MgO) formed after Mg doping. Photoluminescence studies show sharp band in UV region and defects-related broad band emission in the visible range. Gaussian-fitted photoluminescence spectra show that the emission is composed of free exciton recombination and its longitudinal optical (LO) phonon replica. In addition, Mg-related local vibrational mode observed in Raman and FTIR spectra after Mg doping, indicates the incorporation of Mg into the lattice positions of wurtzite ZnO.

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Section: Resultsmentioning

confidence: 99%

Enhanced Fluorescence and Local Vibrational Mode in Near‐White‐Light‐Emitting ZnO:Mg Nanorods System

Udayabhaskar

Karthikeyan

2015

J. Am. Ceram. Soc.

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“…It is obvious that this UV emission band has a large linewidth (>100 meV) and one shoulder (arrow in the �gure) can be clearly seen at lower-energy side of this peak. e ZnO RT UV emission is extensive reported as a characteristic excitonic emission in the literatures [8][9][10][11][12]. In addition, Most of the works indicated that low-energy band tail of UV peak at RT is associated to LO-phonon replica of free exciton [16,21].…”

Section: Methodsmentioning

confidence: 99%

“…In the reported PL spectra, the origin of the room temperature UV emission was extensively studied. Most of the authors suggested that the UV emission at RT originates from free exciton recombination [8][9][10][11][12]. However, Ohashi et al reported that the most intense emission at RT for undoped crystals was not free-exciton recombination but was related to an unspeci�ed localized state [13].…”

Section: Introductionmentioning

confidence: 99%

Study of Ultraviolet Emission Spectra in ZnO Thin Films

Cao

et al. 2013

Journal of Spectroscopy

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Photoluminescence (PL) of ZnO thin films prepared on c-Al2O3substrates by pulsed laser deposition (PLD) are investigated. For all samples, roomtemperature (RT) spectra show a strong band-edge ultraviolet (UV) emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X) emission plays a major role in PL spectra, while the free exciton transition (FX) gradually dominates the spectrum with increasing temperatures. It notes that at low temperature an emission band (FA) appears in low energy side of D0X and FX and can survive up to RT. Further confirmation shows that the origin of the band FA can be attributed to the transitions of conduction band electrons to acceptors (e, A0), in which the acceptor binding energy is estimated to be approximately 121 meV. It is concluded that at room temperature UV emission originates from the corporate contributions of the free exciton and free electrons-to-acceptor transitions.

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“…Zinc oxide (ZnO), a group II-VI semiconductor with high melting temperature, (1) wide bandgap, (2) and large exciton binding energy, (3) has attracted much attention in the past decade. Many ZnO-based devices have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

2018

Sensors and Materials

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Undoped and erbium-doped zinc oxide followed by indium-doped zinc oxide layers on p-type Si substrate were prepared by spray pyrolysis with zinc acetate, erbium acetate, and indium nitrate precursors. The surface morphology and crystalline quality were investigated. Using a front-and backside metallization process, diodes were fabricated. The current-voltage characteristics of these diodes were analyzed. The structural resistance, which is an important issue in gas sensing application, shows an increase-decrease behavior with the increase of erbium contents in zinc oxide. With a reverse bias in excess of 6 V, two distinct green light emissions with 536 and 555 nm wavelength and one red light emission at around 664 nm of the 5% erbium-doped zinc oxide diode can be observed. The structural resistance character, as well as the ideality factor of these diodes were analyzed and discussed.

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Chemomechanical Polishing Effects on the Room Temperature Photoluminescence of Bulk ZnO: Exciton–LO Phonon Interaction

Cited by 7 publications

References 0 publications

Enhanced Fluorescence and Local Vibrational Mode in Near‐White‐Light‐Emitting ZnO:Mg Nanorods System

Enhanced Fluorescence and Local Vibrational Mode in Near‐White‐Light‐Emitting ZnO:Mg Nanorods System

Study of Ultraviolet Emission Spectra in ZnO Thin Films

Resistance Study of Er-doped Zinc Oxide Diode by Spray Pyrolysis

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