ChemInform Abstract: SYST. CER-NICKEL-SILICIUM IM BEREICH 33,3-100 ATOM-PZ. CE

Bodak, O.I.; Mis'kiv, M. G.; Tyvanchuk, A. T.; Kharchenko, O.; Gladyshevskii, E.I.

doi:10.1002/chin.197330034

Cited by 10 publications

(14 citation statements)

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“…All samples were annealed at 800 °C for one to two weeks. By X-ray diffraction, the crystal structures (ZrNiAl-structure for X = Al, In; LaPtSistructure for X = Si; TiNiSi-structure for X = Ge) and the lattice parameters were found to agree with literature data [1][2][3][4][5]. By microprobe analysis, the matrix composition and the composition and concentration of impurity phases were determined.…”

mentioning

confidence: 57%

Electronic properties of CeNiX compounds

Kuang¹,

Cui²,

Li³

et al. 1992

Journal of Magnetism and Magnetic Materials

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confidence: 57%

Electronic properties of CeNiX compounds

Kuang¹,

Cui²,

Li³

et al. 1992

Journal of Magnetism and Magnetic Materials

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“…reported on an unknown orthorhombic phase with approximate composition Ce~10Ni~~2Si~3 with space group Pbcm and lattice constants a = 5-97, b= 7.50 and c= 29.2 A. An orthorhombic phase with this unit cell was also reported by Bodak, Mis'kiv, Tyvanchuk, Kharchenko & Gladyshevskii (1973), but with approximate composition Ce~8Ni~9Si~ 3. This paper reports on the structure and composition of this compound and other phases isotypic with it.…”

mentioning

confidence: 71%

“…Systems of rare-earth element-transition element-silicon are characterized by an unusually large number of ternary compounds (Parthb & Chabot, 1984). For example, there are 21 known phases of Ce-Ni-Si (Bodak, Mis'kiv, Tyvanchuk, Kharchenko & Gladyshevskii, 1973). Recently, two additional ternary phases were discovered in this system: CezNi3Si 5 (Chabot & Parthb, 1984) of U2Co3Si s type and Ce~aNi6Si~ (Hovestreydt, 1984) of monoclinic Pr~4NiaSi~l type.…”

mentioning

confidence: 99%

Hexapraseodymium heptanickel tetrasilicide, Pr6Ni7Si4, an intergrowth of ThSi2- and Y3Rh2Si2-type slabs

Hovestreydt¹,

Parthé²

1984

Acta Crystallogr C

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Abstract. Mr= 1368.76, oP68, orthorhombic, Pbcm, a = 5.888 (1), b = 7.4265 (9), c = 29.558 (8) A, V= 1292.6 (2) A 3, Z=4, D x=7.033gcm -3, MoK~t, 2 = 0.7107 A, g = 32.24 mm -~, F(000) = 2424, room temperature, final R =0.026 for I011 contributing reflections. The Pr6Ni7Si 4 structure can be consideredSi (1) 8 (e) as an intergrowth of ThSi z-and Y3Rh2Si2-type slabs. It Pr(l) 8(e) is built up exclusively of trigonal prisms formed by Pr Ni(l) 8(e) atoms and centered by Ni or Si atoms. Apart from the Ni(2) 8(e)Si (2) 8(e) central part of the ThSi 2 slab, the structure obeys the Pr(2) 8(e) waist-contact restriction rule. Ce6Ni7Si 4 [a = 5.942 (2), Ni(3) 8 ( with Pr6NivSi 4.

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“…The columns are infinite along the Z-axis and they are limited within the XY plane. All compounds have a hexagonal crystal structure with the same space group P6 3 as Pr 6 Ni 2 Si 3 (n = 2), Pr 5 Ni 2 Si 3 (n = 3), Pr 15 Ni 7 Si 10 (n = 4) and Pr 15 Ni 4 Si 13 (n = 5) have been identified within this series [2][3][4]. For Ce-Ni-Si, only the compounds for n = 3 and 4 exist.…”

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confidence: 99%