ChemInform Abstract: S‐(TRIFLUOROMETHYL)‐S‐ARYLSULFOXIMIDES

Kondratenko, N. V.; Radchenko, O. A.; Yagupol’skii, L. M.

doi:10.1002/chin.198510217

Cited by 2 publications

(4 citation statements)

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“…[278][279][280] Later on, the continuous wave solid-state lasers emitting at near-infrared ($1 lm) wavelength have been adopted, 281,282 for the so-called "thermal laser separation (TLS)" dicing technology. The thermally induced stresses can lead to crack formation or cause propagation of an incipient crack at temperatures below the melting or softening temperature of the substrate.…”

Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

“…233,285 The "seed" crack propagation in a silicon wafer is guided by radiating a continuous wave near-infrared laser beam along a desired path. 278,283 A wet or dry cooling source is usually applied subsequent to laser radiation to enhance the stress difference for better control of crack propagation direction. But due to the temperature dependence of absorption coefficient, a nonlinear bulk volume heating of silicon takes effect.…”

Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

“…At the $1 lm near-infrared wavelength, which is close to the indirect bandgap of silicon at room temperature (E g ¼ 1.12 eV or k ¼ 1.107 lm), the corresponding optical absorption depth is a few hundred micrometers. 278,[283][284][285] Haupt et al introduced a method that relies on continuous wave near-infrared laser radiation for both "seed" crack generation and subsequent guided "seed" crack propagation to realize silicon wafer dicing without utilization of cooling source. The heated material expands and leads to the formation of compressive stresses both radially and tangentially within the laser radiation heated zone.…”

Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

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Die singulation technologies for advanced packaging: A critical review

Lei

Kumar

Yalamanchili

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Die singulation, also known as wafer dicing, is reviewed in terms of the brief history, critical challenges, characterization of singulation quality, different singulation technologies and underlying mechanisms, and post-singulation die strength enhancement. Mechanical blade dicing has been the workhorse of die separation in the semiconductor manufacturing process. It faces growing challenges due to the adoption of copper/low-k dielectric interconnect structures, thin and ultra-thin wafers, die attach films, narrow dicing streets, and complex stacked structures on the dicing streets. Key dicing quality characteristics are chipping, delamination, kerf geometry, die side wall damage, die surface contamination, and die strength degradation. Various die singulation technologies have been developed to address these challenges and quality issues, including dicing by thinning, laser based approaches, laser and mechanical hybrid method, and plasma dicing. Die strength is a critical parameter for thin and ultra-thin dies. Post-dicing die strength enhancement is becoming the complement of most dicing technologies to achieve dies with high fracture strength. Plasma dicing has the potential to achieve much higher die strengths than all the other dicing approaches.

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Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

Section: G Cleavage Separation By Laser Induced Thermal Stressesmentioning

confidence: 99%

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Die singulation technologies for advanced packaging: A critical review

Lei

Kumar

Yalamanchili

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Adachi and Ishihara reported compound 6 in a patent and prepared it by Yagupolskii’s method . To the best of our knowledge, no other synthesis has been proposed in the literature . We chose the molecule 5n as a model substrate owing to its high yielding and straightforward synthesis starting from iodo sulfoximine 1 .…”

Section: Results and Discussionmentioning

confidence: 99%

Divergent Synthesis of 1,2-Benzo[e]thiazine and Benzo[d]thiazole Analogues Containing a S-Trifluoromethyl Sulfoximine Group: Preparation and New Properties of the Adachi Reagent

Barthelemy

Anselmi

et al. 2019

J. Org. Chem.

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HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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ChemInform Abstract: S‐(TRIFLUOROMETHYL)‐S‐ARYLSULFOXIMIDES

Abstract: Im Gegensatz zu den Arylalkylsulfoxiden, die mit NaN3/konz.

Cited by 2 publications

References 0 publications

Die singulation technologies for advanced packaging: A critical review

Die singulation technologies for advanced packaging: A critical review

Divergent Synthesis of 1,2-Benzo[e]thiazine and Benzo[d]thiazole Analogues Containing a S-Trifluoromethyl Sulfoximine Group: Preparation and New Properties of the Adachi Reagent

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