ChemInform Abstract: MICROSTRUCTURE OF STRONTIUM TITANATE BOUNDARY‐LAYER CAPACITOR MATERIAL

Abstract

An einem SrTiO3‐ Grenzschichtmaterial, in das Bi2O3 eindiffundiert ist, wird mit Hilfe der Rasterelektronenmikroskopie, der ESCA (kombiniert mit Artlonenätzung) sowie der Transmissionselektronenmikroskopie (ausgerüstet mit einem energiedispersiven Röntgen‐ Spektrometer) eine detaillierte Korngrenzenuntersuchung durchgeführt.

Grain Boundaries of Semiconducting SrTiO3 and BaTiO3 Ceramics Synthesized from Surface‐Coated Powders

“…The grain boundary width of the SrTiO 3 and BaTiO 3 ceramics which were synthesized by the segregation and/or postsintering diffusion techniques has been reported to range from 10 to 100 nm. 5,6 On the other hand, the grain boundary width of the hot-press sintered ceramics, which were prepared in this study, was less than a few nanometers; these grain boundaries appeared to be remarkably narrow and uniform in TEM micrographs, compared with those in ceramics prepared by the segregation and/or postsintering diffusion techniques. 5,6 Figure 2(b) shows the EDS results, which were obtained along the line AB across grain boundary C. Ba, Ti, and O ions were detected at grains G 1 and G 2 , and grain boundary C. Mn ions, which were coated on the surface of the starting BT powders, were observed at grain boundary C, but not at grains G 1 and G 2 .…”

“…1,2 Much research has been conducted on the relation between the electronic behavior and the structural and chemical characteristics of grain boundaries. [3][4][5][6] Various techniques have also been investigated for control of grain boundary features; these techniques include the segregation of particular additives into grain boundary areas during sintering processes as well as the diffusion of additives through the grain boundaries during postsintering heat treatment. [3][4][5][6] Defect chemistry and electrical characteristics of grain boundaries of ceramics synthesized by these methods were investigated.…”

“…[3][4][5][6] Various techniques have also been investigated for control of grain boundary features; these techniques include the segregation of particular additives into grain boundary areas during sintering processes as well as the diffusion of additives through the grain boundaries during postsintering heat treatment. [3][4][5][6] Defect chemistry and electrical characteristics of grain boundaries of ceramics synthesized by these methods were investigated. 3,4,7,8 However, despite many previous studies of the techniques, there are still many unsolved questions about the relation between grain boundary chemistry and the electrical characteristics of ceramics prepared by these methods; these methods need to be evaluated through trial and error.…”