Articles you may be interested inThe strain models of misfit dislocations at cubic semiconductors hetero-interfaces Appl.The acting slip mechanism for the generation of misfit dislocations in diamond-typesemiconductor heterostructures is investigated with transmission electron microscopy. It is shown that dissociation ofthe 60°-mixed dislocations can lead to a difference in strain accommodation for tensile and compressive strain. A strain/thickness relation is obtained from the energy expression for nucleation of half-loops. This relation is compared with other theoretical relations and with experimental strain data for Si/GaP (00 1) and IIlomGa(l.93As/GaAs(OOl), measured with transmission electron microscopy and ion blocking.4413
The mean-square vibrational amplitude and isomer shift of gold atoms in small particles of gold metal embedded in gelatin were investigated by the Mossbauer effect. Nine samples with average particle diameters of 30-170 A were examined, three of which (31, 52, and 168 A) as function of temperature. All samples showed different, but positive, isomer shifts with respect to bulk gold without an apparent correlation with the particle size, At 4. 2'K the Mossbauer fraction shows no significant difference with bulk gold, whereas at higher temperatures the Mossbauer fraction decreases more rapidly when the particle size becomes smaller. This temperature dependence is analyzed within the framework of the Debye continuum theory of lattice vibrations, which is a good approximation in case of bulk gold. It is shown that neither the application of a low-frequency cutoff on the phonon spectrum, nor the contribution of surface and edge modes or an independent treatment of bulk and surface atoms gives a satisfactory explanation of the observations, but, that the vibration of the particle as a whole has to be taken into account, which overshadows possible size effects.
SfliO, capacitor material with indiffused BiZ03 was studied using SEM, ESCA combined with Ar+ ion-etching, and TEM equipped with EDX. The apparent thickness of a second-phase layer observed with SEM was found to be influenced by in-depth effects. ESCA and TEM results show that only a 10-to 100-nm thick layer of second phase is present between the S f f i 0 3 grains. In addition, it was found with TEM that the outer part of each grain contained Bi (at most 2 at.%), representing a diffusion layer. These results have implications for the boundary-layer model proposed to explain the dielectric proper ties.
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