ChemInform Abstract: Low Temperature Silicon Epitaxy Using Si2H6

Abstract

373ChemInform Abstract at amospheric pressure has been studied in order to minimize autodoping from the highly doped Si substrate. Using a conventional vertical reactor and disilane, the temp. can be reduced to 800 rc C. The epilayer exhibits good crystalline quality (defect density < 1/cm2) and the thickness of the transition layer from highly doped Si to the epilayer is reduced to below 0.3 µm. The bipolar transistor fabricated in the epilayer of less than 1 µm thickness shows good electrical characteristics (breakdown voltage > 25 V).

Empirical-potential study of the dissociative chemisorption ofSi2H6on the<

“…[1][2][3][4][5][6][7][8][9][10][11][15][16][17][18][19][20][21][22][23][24][25][26][27][28] Gates and Chiang 15 have proposed two possible reaction processes for the initial dissociation of disilane on the Si(001)2ϫ1 surface, namely Si 2 H 6 ͑ g ͒→SiH 4 ͑ g ͒ϩSiH 2 ͑ a ͒ ͑1͒…”