Chemischer Informationsdienst
 1978
DOI: 10.1002/chin.197814013
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ChemInform Abstract: HYDRIDE VPE GROWTH OF GALLIUM ARSENIDE FOR FET′S

G. B. Stringfellow1,
G. Hom2

Abstract: Es wird gezeigt, daß epitaktische GaAs‐ Schichten zur Herstellung von Oberflächenbarriere‐Feldeffekttransistoren mit Hilfe des Systems AsH3 + HCl + Ga + H, aus der Gasphase abgeschieden werden können.

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