ChemInform Abstract: Electrical Properties of Silicon Dioxide Films Fabricated at 700 ° C.

Abstract

High quality SiOz films have been fabricated on Si Substrates over the oxidation temperature range 635‐1100°C. Dry, high pressure oxidation (DRYPOX) is used to grow oxides at temperatures below 1000°C. A comparison of these DRYPOX films with conventional, high temperature (l000°C and 1100°C) dry thermal oxide films and SiO2 films produced by low pressure CVD of dichlorsilane and nitrous oxide at 730°C indicates that the electrical characteristics of DRYPOX films are similar to conventional 1000°C thermal oxides.

Annealing Characteristics of Ultrathin Silicon Oxides Grown at Low Temperatures

“…Gate and interpoly oxide growth at temperatures as low as 635~ in dry oxygen and in pyrogenic steam under ambient pressures ranging from 1 to 20 atm, and also up to 500 atm in dry oxygen only, have been widely reported (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11). Such low-temperature oxidations allow annealing of transistor punch-through implants to be performed independently of gate oxidations (4).…”