ChemInform Abstract: CsBi₄Te₆: A High‐Performance Thermoelectric Material for Low‐Temperature Applications.

Abstract

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Electrical and thermal transport properties of medium-entropy Si Ge Sn alloys

“…For example, CsBi4Te6 consists of a Cs+ layer that separates [Bi4Te6]-bilayers. Owing to this complex structure, the phonons in CsBi4Te6 exhibit long and convoluted phonon mean free paths that significantly reduce the thermal conductivity [10,11]. As a result, CsBi4Te6 can reach a high zT of 0.8 and a low thermal conductivity of 1.25 W/(m•K) at room temperature [11].…”

Thermoelectric properties of new Bi-chalcogenide layered compounds

“…The material, which satisfies both large S and low , is semiconductors with a narrow band gap [1]. For example, the Bi2Te3 family possesses such a band structure and shows a high performance of ZT ~1 at around 300 K due to the large  and the suitable n [2,3]. Hence, Bi2Te3-based compounds have been used as a practical thermoelectric material for a long time [2].…”

Thin Films of Topological Nodal Line Semimetals as a Candidate for Efficient Thermoelectric Converters

“…Consequently, there has been considerable effort in the search for materials with a high figure of merit (ZT ) (see Eq. ( 4)), which is used to quantify the efficiency of thermoelectric materials, and numerous theoretical studies have discussed its physical limits [3][4][5][6][7][8][9][10][11]. Such materials include bismuth telluride alloys, which are widely used in thermoelectric devices operating below 500 K and have ZT of ∼1 at room temperature [12], and lead telluride alloys, which have been reported with a high ZT of ∼2.2 at 915 K [13][14][15].…”

“…We directly calculate the energy dispersions for TNLS films by the exact diagonalization method, and then estimate thermoelectric transport coefficients from Eqs. ( 5) and (6).…”