SynopsisOrganic semiconductor devices using electrochemically prepared poly( N-methylpyrrole) (PNP) were characterized by capacitance-voltage (C-V) measurements. A device with aluminum evaporated on the PNP behaved as a MOS (metal-oxide semiconductor) diode in vacuum.Assuming the oxide layer between the metal and the PNP to be pure Al&, the MOS parameters were calculated. The values obtained for depletion width W = 166 A and acceptor density NA = 10l8 cm-3 in the PNP were reasonable by comparison with the previously reported values obtained by Schottky analysis. An indium/poly( p-phenylene)-1,3,4-oxadiazole (POD)/PNP diode was prepared, and C-V measurements were carried out in air. The diode behaved like an MIS (metal-insulator semiconductor) device, but the characteristics showed large variation with frequency. We have proposed a schematic model for this mechanism on the basis of the results obtained by dielectric measurements of POD and the temperature dependence of the MIS characteristics.