Chemically enhanced synergistic wear: A copper chemical mechanical polishing case study

Nolan, L.; Cadien, Ken

doi:10.1016/j.wear.2013.08.001

Cited by 21 publications

(3 citation statements)

References 31 publications

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“…The average MRR continued to rise until the H 2 O 2 concentration was increased to 5 wt%, and the average MRR improved to 303.9 nm/min and WIWNU to 3.2%. In Cu CMP, H 2 O 2 , used as an oxidizer, oxidized the surface of the Cu, helping to create a mechanically easy-to-remove surface [37,38]. Copper etching occurs when Cu ions and complexing agents are combined during the oxidation of Cu.…”

Section: Effect Of Chemical Component Concentration On Materials Removal In Eaf-cmpmentioning

confidence: 99%

Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Park

Lee

2021

Applied Sciences

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Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles. With the increasing integration of semiconductor devices, the CMP process is gaining increasing importance in semiconductor manufacturing. Abrasive-free CMP (AF-CMP) uses chemical solutions that do not contain abrasive particles to reduce scratches and improve planarization capabilities. However, because AF-CMP does not use abrasive particles for mechanical material removal, the material removal rate (MRR) is lower than that of conventional CMP methods. In this study, we attempted to improve the material removal efficiency of AF-CMP using electrolytic ionization of a chemical solution (electrolytically ionized abrasive-free CMP; EAF-CMP). EAF-CMP had a higher MRR than AF-CMP, possibly due to the high chemical reactivity and mechanical material removal of the former. In EAF-CMP, the addition of hydrogen peroxide (H2O2) and citric acid increased the MRR, while the addition of benzotriazole (BTA) lowered this rate. The results highlight the need for studies on diverse chemical solutions and material removal mechanisms in the future.

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Section: Effect Of Chemical Component Concentration On Materials Removal In Eaf-cmpmentioning

confidence: 99%

Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Park

Lee

2021

Applied Sciences

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“…Combined the above results, it can be inferred that r c-w , which can be estimated by subtracting r c0 and r w-c from the total MRR, accounts for the majority of the total MRR, which indicates that the copper CMP process is dominant by the corrosion-enhanced wear under this condition. 32,38,45 Comparison between 1,2,4-triazole and BTA.-Moreover, the above material removal model can be used to partly explain why the passivation of 1,2,4-triazole for copper CMP is weaker than that of BTA in acidic slurries. 19,20 The addition of 5 mM BTA in the basic solution that was composed of 1.0 wt% H 2 O 2 , 0.1 M glycine and with pH 4.0 can get I corr 5.84 μA/cm 2 , while the addition of 5 mM 1,2,4-triazole can get I corr 57.0 μA/cm 2 .…”

Section: Table I Corresponding Corrosion Potential E Corr and Corrosi...mentioning

confidence: 99%

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

Jiang

2016

ECS J. Solid State Sci. Technol.

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Optimizing the copper slurry, especially the corrosion inhibitor, is critical to its successful application in copper chemical mechanical polishing (CMP) for the next-generation ultra-large scale integrated circuits manufacturing. In this paper, 1,2,4-triazole was considered to be a promising alternative to the conventional benzotriazole (BTA). The passivation kinetics of 1,2,4-triazole on the copper surface was investigated with several different electrochemical techniques, including open-circuit potential, potentiodynamic polarization, cyclic polarization and chronoamperometry. The results of the chronoamperometry experiments show that the peak response If and the time constant τf of the current density from the faradaic reactions are critical to the passivation kinetics of 1,2,4-triazole. Based on the electrochemical results and the existing material removal model, the material removal mechanism of copper when being polished with the slurry containing colloidal silica, H2O2, glycine, 1,2,4-triazole and with pH 6.0 is inferred to be corrosion-enhanced wear dominant. Additionally, the passivation kinetics parameters of 1,2,4-triazole were compared with those of BTA. Icorr, If and τf of 1,2,4-triazole are all larger than those of BTA, which can be used to partly explain why 1,2,4-triazole's passivation is relatively weaker than that of BTA and its resultant suitability as an alternative corrosion inhibitor for copper CMP.

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“…[1][2][3] However, the practice of CMP still remains at an empirical level due to the complicated process parameters, such as the polishing pad (Young's modulus, roughness), wafer (hardness, bonding energy), abrasive particle (hardness, size and concentration), slurry (oxidizer, pH and flow rate), operating values (velocity, pressure) and so on. 4,5 In the past, various mechanical parameters have been primarily optimized to determine the maximum removal rate, such as pressure, platen speed, abrasive contents, polishing time and slurry flow rate, etc. Although several methods, such as Analysis of Variance (ANOVA) and Orthogonal Array, have been developed for the optimization of wafer process, 6 the improvement has been incremental and cannot meet the needs of the state-of-the-art IC fabrication, especially with the higher stringently environmental requirements.…”

Section: Introductionmentioning

confidence: 99%

Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing

Wang¹,

Chen²,

Zhao

2015

Int. J. Precis. Eng. Manuf.

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In order to eliminate the disposal issues of toxic chemicals in chemical mechanical planarization, a water-based ultra-polishing experiment with alumina abrasives was investigated for silicon wafer based on Box-behnken theory. It was found that the material removal rate (MRR) was sensitive to pH value, more sensitive to the slurry flow rate, and most sensitive to the oxidizer concentration. Under the optimal conditions of oxidizer concentration (0.44%), slurry flow rate (71.86 mL/min), and natural pH (pH: 7), the highest MRR was derived. Finally, a confuse-understanding of pH on material removal was addressed as well. It was pointed out that the increase in pH leads to the initial decrease in MRR, followed by a rapid increase as pH exceeds 11.

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Chemically enhanced synergistic wear: A copper chemical mechanical polishing case study

Cited by 21 publications

References 31 publications

Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper

Passivation Kinetics of 1,2,4-Triazole in Copper Chemical Mechanical Polishing

Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing

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