Crosslinkable hole transport materials (HTMs) with high triplet energies would have a balance of carrier injection into the emitting material layer, suppressing the triplet exciton quenching and resulting in high-performance solution-processed organic light-emitting diode (OLED) devices. Two novel crosslinkable HTMs with different central units, N 2 , N 8 -di-p-tolyl-N 2 ,N 8 -bis(4-vinylphenyl)dibenzo[b,d]thiophene-2,8-diamine (V-p-DBT) and N 2 ,N 8 -di-p-tolyl-N 2 ,N 8 -bis(4-vinylphenyl)dibenzo[b,d]furan-2,8-diamine (V-p-DBF), were designed and synthesized. The use of dibenzothiophene and dibenzofuran units increases the torsion angle compared with the commonly used N,N'-di-p-tolyl-N,N'-bis(4-vinylphenyl)-[1,1'-biphenyl]-4,4'-diamine (V-p-TPD), leading to high triplet energies of 2.57 and 2.64 eV, respectively. The triplet energies of V-p-DBT and V-p-DBF effectively suppress triplet exciton quenching. Furthermore, the crosslinked HTM layer showed excellent solvent-resistant abilities and high thermal stability. An outstanding maximum current efficiency (CE max ) of 79.94 cd A −1 and maximum external quantum efficiency (EQE max ) of 24.35% were obtained by V-p-DBF-based green thermally activated delayed fluorescent (TADF) OLEDs. This work provides a new molecular design strategy for achieving efficient solution-processed TADF OLEDs.