Chemically amplified, thick film, i-line positive resist for electroplating and redistribution applications

Toukhy, Medhat A.; Paunescu, Margareta; Chen, Chun-Wei; Meyer, S. S.; Pawlowski, Georg; Murakami, Yoshio; Hamel, Clifford

doi:10.1117/12.656595

Cited by 2 publications

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“…6a and Fig. 6b, strongly limiting the minimum feature size achievable [48][49][50][51]. Furthermore, undercuts produce discontinuous Ti barriers, finally leading to reliability issues [8].…”

Section: Impact On Lithography Processmentioning

confidence: 99%

“…A slight decrease of the dose absorbed in the polymer, resulting from destructive interference, is observed in presence of a capping layer. The increase in the exposure dose, needed when the polymer layer is in direct contact with copper is therefore most likely another signature of photo acid generator quenching in the polymer [48,50].…”

Section: Impact On Lithography Processmentioning

confidence: 99%

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Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Chery

Bhatia

Pinho

et al. 2023

JOM

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Atomic layer-deposited (ALD) inorganic films were processed on top of copper metal lines in a polymer-based redistribution layer (RDL). The primary objective was to develop capping layers thinner than 15 nm to prevent copper oxidation. Due to their uniformity and high density, ALD layers are established permeation barriers. Nonetheless, owing to the presence of polymers in the final product, a low deposition temperature is required, resulting in an increased defect density and a greater susceptibility to degradation by moisture. In this study, various inorganic cappings, based on Al2O3, HfO2 and TiO2, deposited at 100 °C were integrated in an RDL stack. It is demonstrated that they impede the reaction of the polymer photo acid generator with copper, improving the lithography process, and ultimately allowing to print smaller critical dimensions. Additionally, capping layers built upon Al2O3 or HfO2 are shown to fully block copper oxidation after reliability stress tests.

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Section: Impact On Lithography Processmentioning

confidence: 99%

Section: Impact On Lithography Processmentioning

confidence: 99%

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Chery

Bhatia

Pinho

et al. 2023

JOM

View full text Add to dashboard Cite

show abstract

Evolution of patterning materials towards the Moore’s Law 2.0 Era

Goldfarb

2022

Jpn. J. Appl. Phys.

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In this paper, the utilization of lithographic materials for semiconductor patterning applications based on optical and EUV radiation sources is reviewed. Photoresist platforms including novolac, chemically amplified, chain scission, molecular and inorganic materials are discussed in relation to their chemistry, design, processing, and performance. If the focus of Moore's Law 1.0 was on laterally scaling the number of components on a single chip, Moore's Law 2.0 can be understood as the coming era of 3D scaling, where the improved performance from 2D shrinking is replaced by integrated AI, 3D Packaging, 3D transistors and new types of memory, among other enabling enablers. As the historical patterning challenges faced by the lithographic industry to scale down semiconductor devices over multiple technology nodes are reviewed from a materials perspective, insight is given regarding future patterning materials utilization and the importance of back-implementing leading-edge materials for Moore's Law 2.0 patterning applications.

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Chemically amplified, thick film, i-line positive resist for electroplating and redistribution applications

Cited by 2 publications

References 0 publications

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Inorganic Capping Layers in RDL Technologies: Process Advantages and Reliability

Evolution of patterning materials towards the Moore’s Law 2.0 Era

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