Chemical vapour growth of β-SiC whiskers from a gas mixture of Si2Cl6-CH4-H2-Ar

Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

“…In the typical VLS growth process of b-SiC w , the Si-and C-components provided to the catalyst ball are in the forms of SiO (gas) , CO (gas) , SiCl 4(gas) , CCl 4(gas) , or MTS [9][10][11][12][13][14][15]. However, in our experiments, such substances could not be formed because the raw materials consist only of SiC and Fe powders, so the formation mechanism of 6H-SiC w should be different from those of the previous studies.…”

“…These methods can be mainly classified into three categories: (1) the thermal decomposition of organic silicon compounds such as methyl trichlorosilane (MTS) [9][10][11], (2) the reaction between some halides such as SiCl 4 and CCl 4 in the gas flow of hydrogen [12] and (3) carbonthermal reduction of silica, including the growth of SiC w from rice hulls [13][14][15] and its variants [16,17]. However, most of these whiskers were of b phase, i.e.…”

“…Many methods for fabricating SiC w have been proposed since the 1970s, with Ni or Fe as the catalyst [8][9][10][11][12][13][14][15][16][17]. These methods can be mainly classified into three categories: (1) the thermal decomposition of organic silicon compounds such as methyl trichlorosilane (MTS) [9][10][11], (2) the reaction between some halides such as SiCl 4 and CCl 4 in the gas flow of hydrogen [12] and (3) carbonthermal reduction of silica, including the growth of SiC w from rice hulls [13][14][15] and its variants [16,17].…”

Effect of the addition of TEOS on the SiC fibers fabricated by electrospinning

“…Recently, much more effort has been devoted to the synthesis process of SiC fibers with nanostructures, including carbothermal reduction of silica [7][8][9], chemical vapor deposition [6,[10][11][12], carbon nanotube-templated growth [13], etc. It has been demonstrated that polycarbosilane (PCS) is used to synthesize SiC fibers by melt-spinning, curing and pyrolysis.…”

Growth of SiC nanowires within stacked SiC fiber fabrics by a noncatalytic chemical vapor infiltration technique

“…The 1D SiC nanostructures have been synthesized by various routes such as carbothermal reduction of silica [10][11][12][13], chemical vapor deposition (CVD) with the aid of catalysts through the vapor-liquid-solid (VLS) mechanism [3,[14][15][16], catalyst-free CVD process [6,9,17], carbon nanotube-templated growth [4,18,19], etc. Among these methods, the catalyst-free CVI process, as a derivative of the CVD method, is considered to be the most appropriate to apply the SiC f /SiC composites from the aspects of the high purity and the capability of the in situ growth of SiC nanowires during the infiltration process of the SiC matrix.…”