Chemical vapour deposition on silicon: In situ surface studies

Foord, John S.; Jackman, RB

doi:10.1016/0009-2614(84)85020-4

Cited by 75 publications

(19 citation statements)

References 15 publications

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“…Because contamination on the substrate is removed and no hydrocarbon is expected in the environment, the only source of the carbon is the ligand of the precursor (CO). This result is in agreement with the results of previous studies showing the carbon concentration in the electron beam-deposited Fe films on clean Si surfaces [11,13]. The concentration of carbon under electron irradiation is frequently seen for CO-adsorbed transition metals [21] and arises from the occurrence of two processes: CO ðadsÞ !…”

Section: Article In Presssupporting

confidence: 93%

“…The resultant carbide and/or carbon layer might have prevented bulk diffusion of Si and Fe, and contributed to the crystallization of Fe nano-dots. The quantity of carbon may not be enough for Fe carbide formation [11] because reaction (2) would become more predominant over reaction (3) as the temperature becomes higher. Thus, we assume that the nano-crystals are pure Fe, although the origin of rotation of them against Si substrates is not clear.…”

Section: Article In Pressmentioning

confidence: 97%

“…The vapour of iron (Fe) pentacarbonyl is utilized as a precursor. The initial stage of Fe chemical vapour deposition (CVD) in the UHV environment has been investigated vigorously [11][12][13][14]. The mechanism of pyrolysis, photolysis, and electron beam desorption has been clarified systematically and important physical factors have been determined.…”

Section: Introductionmentioning

confidence: 99%

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Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Tanaka

Shimojo

Takeguchi

et al. 2005

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 93%

Section: Article In Pressmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Tanaka

Shimojo

Takeguchi

et al. 2005

Journal of Crystal Growth

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“…Because no hydrocarbons are expected to be formed in the environment, the only source of carbon is the ligand of the precursor (CO). This result is in agreement with the results of previous studies on the C concentration in electron-beam-deposited Fe films on clean Si surfaces [78,79]. It can be concluded that the deposited dots are composed of a large quantity of iron and a small amount of carbon.…”

Section: Selective Deposition and Growth Of Iron Silicides In Ultrahisupporting

confidence: 93%

Nanofabrication by advanced electron microscopy using intense and focused beam^∗

Furuya

2008

Science and Technology of Advanced Materials

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The nanogrowth and nanofabrication of solid substances using an intense and focused electron beam are reviewed in terms of the application of scanning and transmission electron microscopy (SEM, TEM and STEM) to control the size, position and structure of nanomaterials. The first example discussed is the growth of freestanding nanotrees on insulator substrates by TEM. The growth process of the nanotrees was observed in situ and analyzed by high-resolution TEM (HRTEM) and was mainly controlled by the intensity of the electron beam. The second example is position-and size-controlled nanofabrication by STEM using a focused electron beam. The diameters of the nanostructures grown ranged from 4 to 20 nm depending on the size of the electron beam. Magnetic nanostructures were also obtained using an iron-containing precursor gas, Fe(CO) 5 . The freestanding iron nanoantennas were examined by electron holography. The magnetic field was observed to leak from the nanostructure body which appeared to act as a 'nanomagnet'. The third example described is the effect of a vacuum on the size and growth process of fabricated nanodots containing W in an ultrahigh-vacuum field-emission TEM (UHV-FE-TEM). The size of the dots can be controlled by changing the dose of electrons and the partial pressure of the precursor. The smallest particle size obtained was about 1.5 nm in diameter, which is the smallest size reported using this method. Finally, the importance of a smaller probe and a higher electron-beam current with atomic resolution is emphasized and an attempt to develop an ultrahigh-vacuum spherical aberration corrected STEM (Cs-corrected STEM) at NIMS is reported.

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“…Although Fe film growth has not been studied on SiC surfaces it has been studied on Si. Fe films grown to thicknesses of a few monolayers on clean Si(100) substrates exhibit island growth at low coverages followed by coalescence into a continuous film at high coverages [31][32][33][34][35]. In the study of the initial stages of Fe CVD onto Si(100), its morphology is characterized by formation of small clusters.…”

Section: Fe/sic and O/fe/sic Surfacesmentioning

confidence: 99%

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

2005

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Vapor phase lubrication (VPL) has been proposed as a method for lubrication of high temperature engines. During VPL, lubricants such as tricresylphosphate (TCP), (CH 3 -C 6 H 4 O) 3 P=O, are delivered through the vapor phase to high temperature engine parts and react on their surfaces to deposit a thin, solid, lubricating film. Although ceramics such as SiC are desirable materials for high temperature applications, their surfaces are unreactive for the decomposition of TCP and thus not amenable to VPL. As a means of activating the SiC surface for TCP decomposition we have used chemical vapor deposition of Fe from Fe(CO) 5 . Modification of the SiC surface with adsorbed Fe accelerates subsequent decomposition of TCP and deposition of P and C onto the surface. In the temperature range 500-800 K, m-TCP decomposes more readily on Fe-coated SiC surfaces than on SiC surfaces. The C and P deposition rates depend on the thickness of the Fe film and are further enhanced by oxidation of the Fe. This work provides a proof-of-concept demonstration of the feasibility of using VPL for ceramics.

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Chemical vapour deposition on silicon: In situ surface studies

Cited by 75 publications

References 15 publications

Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Nanofabrication by advanced electron microscopy using intense and focused beam^∗

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

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Chemical vapour deposition on silicon: In situ surface studies

Cited by 75 publications

References 15 publications

Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Formation of iron nano-dot arrays by electron beam-induced deposition using an ultrahigh vacuum transmission electron microscope

Nanofabrication by advanced electron microscopy using intense and focused beam∗

Activation of SiC Surfaces for Vapor Phase Lubrication by Chemical Vapor Deposition of Fe

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Product

Resources

About

Nanofabrication by advanced electron microscopy using intense and focused beam^∗