Chemical vapour deposition of SiC layers from a gas mixture of CH3SiCl3+H2+Ar

Motojima, Seiji; Hasegawa, M.

doi:10.1016/0040-6090(90)90154-6

Thin Solid Films

1990

DOI: 10.1016/0040-6090(90)90154-6

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Chemical vapour deposition of SiC layers from a gas mixture of CH3SiCl3+H2+Ar

Seiji Motojima¹,

M. Hasegawa²

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Cited by 9 publications

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“…The microstructure, phase content, and morphology of the deposit are significantly affected by deposition temperature, pressure, and initial gas composition. [25][26][27][28][29][30][31][32] The SiC grain size increases with increasing deposition temperature 13,31 or pressure, 29,30 but with decreasing H 2 /MTS ratio. 29,32 In general, a lower deposition temperature 16,28,33,34 or a greater pressure 28,32,34 is favorable for Si co-deposition with SiC.…”

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“…[25][26][27][28][29][30][31][32] The SiC grain size increases with increasing deposition temperature 13,31 or pressure, 29,30 but with decreasing H 2 /MTS ratio. 29,32 In general, a lower deposition temperature 16,28,33,34 or a greater pressure 28,32,34 is favorable for Si co-deposition with SiC. Si is also found to coexist with SiC at relatively high H 2 /MTS ratios.…”

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“…Conditions allowing the fabrication of pure SiC in the MTS-H 2 system by CVD/CVI vary with regards to deposition temperatures, pressure, input gas composition, and gas flow rate, but they are commonly in the temperature range of 1000 to 1400°C, at pressures below 26 664 Pa (200 Torr), and H 2 /MTS ratios below 100. 12,14,[24][25][26][27][28]33,34,[39][40][41][42][43][44][45] Although extensive experimental investigations have been performed on SiC deposition from the MTS-H 2 system, the full range of deposition conditions has not yet been covered as such studies are time-consuming and cost-prohibitive. Several attempts have been made to explore this system by computational thermodynamics instead.…”

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“…First, the theoretical H 2 /MTS ratios allowing the co-deposition of free Si and SiC are significantly higher than those determined by experiments, that is, >~10 4 by thermodynamic calculations 46,48 vs. usually <100 in experiments. 28,32,[34][35][36] Second, pure SiC was prepared by CVD with H 2 /MTS ratios of around 10, 25,28,40,44,50 however, thermodynamic calculations 18,46,48,51 indicated that co-deposition of graphite and SiC should always occur at such a low ratio. It is generally accepted that the former discrepancy can be qualitatively attributed to the kinetics effects.…”

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confidence: 99%

“…The CVD of SiC is sensitive to deposition parameters, [25][26][27][28][29][30][31][32] thus, it is necessary to explore the large deposition condition space as detailed as possible. However, such an effort cannot be accomplished solely by experimental efforts within a reasonable time and cost.…”

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Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

et al. 2021

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Silicon carbide (SiC) attracts extensive attention due to its attractive properties, such as a large bandgap, excellent chemical stability, high-temperature stability, and resistance to heat, radiation, corrosion, and thermal shock. [1][2][3][4][5][6] Thus, it is widely used within functional and structural materials in high temperature, aerospace, nuclear energy, and other applications. [5][6][7][8][9] Chemical vapor deposition (CVD) and infiltration (CVI) are among the most feasible and widely studied SiC fabrication approaches because of their ability to handle complex geometry, flexible processing conditions, and the high purity, high density, and excellent crystalline morphology of the prepared SiC. [10][11][12][13][14][15][16][17][18][19][20] Methyltrichlorosilane (CH 3 SiCl 3 , MTS) is the most commonly used gas precursor for CVD and CVI of SiC [15][16][17][18][21][22][23][24] owing to its equivalent ratio of silicon (Si) to carbon (C) and the wide range of allowable deposition temperatures. Hydrogen (H 2 ) is frequently used as the carrier and diluent gas with MTS, both delivering the MTS precursor to the reactor and regulating the concentration of mixed gas precursors. 12

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Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

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XRD-Studies of SiC/Si layers on carbon substrates

1997

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Abstract. Structural investigations of thin films of SiC, SiC with free silicon and various titanium silicides (TiSi 2, TiSi and TisSi3) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed. ExperimentalThe hot wall type CVD reactor is shown schematically in Fig. 2. It consist of following components: furnace unit, gas supply and waste * Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday ** To whom correspondence should be addressed elimination. SiC and SiC(Si) polycrystalline layers were deposited from a gas mixture of CH3SiCI3-H 2 Ar gas mixture at temperature range of 900 to 1000 ~ on graphite substrates. The graphite substrates (5 mm diameter, 20ram long) were located in the central part of the horizontal reaction tube which was heated from the outside. The phases of the deposites was identified by X-ray diffraction analysis. The chemical composition and crystal structure of CVD-SiC are strongly influenced by the H2/CH3SiC13 ratio (c 0 and the temperature. Silicon carbide with codeposited silicon was obtained by using a high H2/CH3SiC13 ratio (c 0 [3]. This codeposited silicon was subsequently converted to other compounds. Elemental titanium served as reagent for the formation of different titanium silicides. This titanium was prepared by chemical vapor deposition from a TiCI4-H2-Ar gas mixture at 950 ~ X-ray Diffraction MeasurementsThe structural investigations of these multicomponent silicon carbide/titanium silicide layers were hard to examine. The deposited layers are thin (weak signals, strong carbon signals) and owned a rough surface.The measurements were obtained on a Siemens D 5000 X-ray diffractometer following the various configurations indicated in Fig. 3. The deposited samples were fastened on a sample holder of silicon (slanting cut through a single crystal) in a Bragg-Brentano arrangement. The system was interfaced with a PC for programming and data acquisition. The data were readily transportable to a graphic program (e.g. diffrac AT) for subsequent analysis. Results and DiscussionA X-ray diffraction diagram of a SiC(Si) layer is shown in Fig. 4. We could percieve three different compounds, large signals of the substrate-reflection of graphite and weak signals from fine crystallined silicon carbide and silicon. X-ray diffraction diagrams showed that the deposited compounds were cubic SiC (3C-type) and cubic silicon. SiC was preferred grown in 111-orienta-

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Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2

Loumagne¹,

Langlais²,

Naslain³

et al. 1995

Thin Solid Films

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Chemical vapour deposition of SiC layers from a gas mixture of CH3SiCl3+H2+Ar

Cited by 9 publications

References 19 publications

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

XRD-Studies of SiC/Si layers on carbon substrates

Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2

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Chemical vapour deposition of SiC layers from a gas mixture of CH3SiCl3+H2+Ar

Cited by 9 publications

References 19 publications

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H2*

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H2*

XRD-Studies of SiC/Si layers on carbon substrates

Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2

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Product

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Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*