2016
DOI: 10.1039/c6tc00489j
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Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors

Abstract: Polycrystalline thin films of rhenium disulfide (ReS2) and the alloys Mo1−xRexS2 (0 ≤ x ≤ 0.06) have been deposited by aerosol-assisted chemical vapour deposition (AA-CVD) using [Re(μ-SiPr)3(SiPr)6] and [Mo(S2CNEt2)4] at 475 °C.

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Cited by 48 publications
(40 citation statements)
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“…First, Re is not an earth‐abundant element, and therefore, its price (around 2800 € kg −1 ), determined by its availability and the market demand, is high in comparison to representative TMDCs, such as Mo and W (less than 30 € kg −1 ). Moreover, current methods for the production of ReS 2 are mainly based on chemical vapor deposition (CVD), epitaxial growth, and the Bridgman method, and rely on high process temperatures (from 450 to 1100 °C) for the precursor decomposition (e.g., the melting points of Re powder 3180 °C; Re–Te eutectoid 430 °C; ReO 3 400 °C) . Moreover, they also imply the use of halogen vapor transport in the case of CVD; or HF treatments for cleaning in the Bridgman method and as etchant to delaminate the ReS 2 from the mica substrate in the epitaxial growth .…”
Section: Introductionmentioning
confidence: 99%
“…First, Re is not an earth‐abundant element, and therefore, its price (around 2800 € kg −1 ), determined by its availability and the market demand, is high in comparison to representative TMDCs, such as Mo and W (less than 30 € kg −1 ). Moreover, current methods for the production of ReS 2 are mainly based on chemical vapor deposition (CVD), epitaxial growth, and the Bridgman method, and rely on high process temperatures (from 450 to 1100 °C) for the precursor decomposition (e.g., the melting points of Re powder 3180 °C; Re–Te eutectoid 430 °C; ReO 3 400 °C) . Moreover, they also imply the use of halogen vapor transport in the case of CVD; or HF treatments for cleaning in the Bridgman method and as etchant to delaminate the ReS 2 from the mica substrate in the epitaxial growth .…”
Section: Introductionmentioning
confidence: 99%
“…17 Nb was also introduced into CVD MoS 2 using a metal oxide process 18 and NbCl 5 , demonstrating modification of the MoS 2 resistivity based on substitution. 19 These publications demonstrate that Re doping can work in mechanically exfoliated flakes from MoS 2 grown by vapour phase transport or Nb in isolated CVD domains. A natural extension of these works is to explore Re doping in continuous MoS 2 thin films.…”
mentioning
confidence: 99%
“…crystallographic lattice parameters that increase or decrease linearly with respect to the at% of PbS in the solid solution 27. The use of molecular precursors as a route toward doped and alloyed layered materials and thin films has been demonstrated: the facile doping of Cr and Re into MoS 2 ,29,30 as well as synthesis of Mo 1– x W x S 2 alloys across the range 0 ≤ x ≤ 1,31 both using chemical vapour deposition with metal dithiocarbamate precursors is possible. These bottom up routes provide excellent control of alloying or doping due to the atomistic scale of the precursors, much akin to sol–gel processing in ceramics.…”
Section: Introductionmentioning
confidence: 99%