Chemical vapor infiltration (CVI) SiC whisker on carbon woven fabric for filter applications

Abstract

β-silicon carbide whiskers have been synthesized on a carbon fabric by a vapor-solid (VS) mechanism using the Chemical Vapor Infiltration (CVI) process. Optimum processing conditions for SiC whisker growth were determined by mapping of SiC deposition behavior. SiC was deposited on a carbon fabric substrate as a film or whiskers, depending on processing conditions. The mean diameter and line density of the whiskers was the highest at an input gas ratio of 50. As temperature increases, the mean diameter of the whiskers increased and the line density of whiskers decreased. In the optimum processing conditions, whiskers grew uniformly with high growth density and formed a networking structure between each of the carbon filaments resulting in a structure suitable for filter applications.

Investigating and understanding the initial growth mechanisms of catalyst-free growth of 1D SiC nanostructures

“…33 In our previous study, the tendency of NWs to have cone-like structures increased as the deposition temperature and deposition rate increased. 34,35 This suggests that the island boundaries are relatively more mobile at higher temperatures and under higher grain growth conditions. Thus, the diameter of the NW's body can increase.…”