Chemical Vapor Deposition of Ru Thin Films with an Enhanced Morphology, Thermal Stability, and Electrical Properties Using a RuO₄ Precursor

Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

“…8,9 The ATO (also TiO 2 ) films were grown at relatively low process temperatures (200−300°C). At these temperatures, the anatase phase, of which κ value and band gap are ∼40 and ∼3.4 eV, respectively, is thermodynamically stable.…”

(Invited) ALD and Pulsed-CVD of Ru, RuO2, and SrRuO3

“…Even at some spots, TiN was not covered by Ru film due to considerably retarded initial growth behavior of ALD Ru film. [15] The lower RMS roughness of as-deposited p-CVD Ru film from RuO 4 compared to the ALD Ru film from DER can be explained by negligible incubation period of p-CVD Ru. The fluent nucleation behavior of p-CVD led to dense and small Ru grain as confirmed by the AFM images in the inset of Fig.…”

“…4 (b) and (c), respectively. [15] Conformal film deposition over the three dimensional substrate is crucial for the application of p-CVD RuO 2 and ALD Ru films as an electrode of advanced DRAM capacitor. Figure 5 (a) shows the vertical SEM images of p-CVD RuO 2 films grown on a hole structure with an aspect ratio of 10 and top opening diameter of ~100 nm.…”

“…More details on the experimental conditions were described in ref. [14][15][16][17]. SrRuO 3 film was deposited at 230 o C by combined p-CVD/ALD method using RuO 4 and Sr(iPr 3 Cp) 2 as Ru and Sr sources, respectively.…”

“…[15][16][17] Ru and RuO 2 p-CVD using RuO 4 has exhibited more fluent nucleation and higher growth rate compared to those of Ru ALD. Furthermore, it was firstly reported that combining p-CVD RuO 2 and ALD SrO processes enabled to deposit stoichiometric SrRuO 3 electrode at a low temperature of 230 o C. [18] In this article, growth characteristics and film properties of Ru ALD from DER/O 2 and Ru (RuO 2 ) p-CVD from RuO 4 /H 2 were comparatively summarized.…”