2016
DOI: 10.1016/j.apsusc.2015.10.188
|View full text |Cite
|
Sign up to set email alerts
|

Chemical vapor deposition of low reflective cobalt (II) oxide films

Abstract: OATAO is an open access repository that collects the work of Toulouse researchers and makes it freely available over the web where possible.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
17
0

Year Published

2017
2017
2022
2022

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 14 publications
(17 citation statements)
references
References 51 publications
(63 reference statements)
0
17
0
Order By: Relevance
“…the carbon impurities can be completely removed by a temperature increase from 160 C to 200 C. The CO ligands appear unlikely as sources of the carbon contamination since they can be separated from the cobalt atom at temperatures below 130 C during various CVD processes using Co 2 (CO) 8 enabling the deposition of layers without carbon impurities. 33,45 Furthermore, the Co-CO bonds are weakened by the oxidation of the cobalt during the presented CVD process due to the reduction of the electron density at the metal center, whereby the desorption of the CO ligands is further amplied.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…the carbon impurities can be completely removed by a temperature increase from 160 C to 200 C. The CO ligands appear unlikely as sources of the carbon contamination since they can be separated from the cobalt atom at temperatures below 130 C during various CVD processes using Co 2 (CO) 8 enabling the deposition of layers without carbon impurities. 33,45 Furthermore, the Co-CO bonds are weakened by the oxidation of the cobalt during the presented CVD process due to the reduction of the electron density at the metal center, whereby the desorption of the CO ligands is further amplied.…”
Section: Resultsmentioning
confidence: 99%
“…Only recently AminChalhoub et al addressed the low temperature thermal CVD of cobalt oxide. 33 It was shown that pure CoO lms can be grown with high rates (>100 nm min À1 ) from Co 2 (CO) 8 at temperatures between 120 C and 190 C without addition of any co-reactant. However, the deposition rate is extremely sensitive to temperature changes, which makes a stable and homogeneous process problematic.…”
Section: Introductionmentioning
confidence: 99%
“…This situation also prevails in the investigation of low reflectivity, cobalt oxide films that are used in optical instruments with the purpose of noise attenuation, namely reduction of the stray effect and scattered light in different spectral domains [17]. In this perspective, the authors recently reported the successful, low temperature, CVD processing of black CoO films on silicon [2]. Deposition at low temperature was necessary since the targeted application of the process is the surface functionalization of carbon fiber reinforced polyepoxies (CFRP) composite materials.…”
Section: Introductionmentioning
confidence: 99%
“…This advantage has been considered in the production of cobalt oxide films and nanostructures [10][11][12][13][14][15][16]. However, such infatuation for the CVD of cobalt oxides also reveals that these processes require appropriate chemical routes and engineering to provide materials with the targeted functionalities (see Ref [2] and references therein). This situation also prevails in the investigation of low reflectivity, cobalt oxide films that are used in optical instruments with the purpose of noise attenuation, namely reduction of the stray effect and scattered light in different spectral domains [17].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation