Chemical Vapor Deposition of Copper Alloys

Abstract

Chemical vapor deposition of metals is becoming a desirable alternative to physical deposition techniques (e.g. sputtering, evaporation) for applications in chip wiring. This is due to the possibility of achieving highly conformal coverage and low processing temperatures. Additionally, it is convenient to be able to enhance the physical properties (e.g. corrosion resistance, adhesion, electromigration resistance) of metal films used for chip interconnection by incorporation of an alloying agent. We have investigated the possibility of extending our current copper deposition process to allow for the deposition of copper alloys. By careful selection of the precursors and reactor conditions, simultaneous decomposition of the two compounds to give clean alloy films is effected. Using this co-deposition method, Cu-Co and Cu-Te alloy films were prepared. Precursor and reaction chemistry are discussed as well as some properties of the resulting films.

Metal Organic CVD of Cobalt Thin Films Using Cobalt Tricarbonyl Nitrosyl

“…[9] Its use has been reported [15] and for copper cobalt alloy deposition. [16] Deposition of cobalt layers from CoNO(CO) 3 was studied systematically as a function of substrate temperature using the conditions described in the experimental section. Growth of shiny, well adhered cobalt films occurred readily onto a number of different substrate materials, including silicon (100), sapphire (1102), GaAs(100), glass, and polyimide.…”

Pt, PtNi and PtCoNi film electrocatalysts prepared by chemical vapor deposition for the oxygen reduction reaction in 0.5M KOH

“…The presence of more than one phase in XRD patterns of asdeposited films could be explained as it has been pointed out by several authors; chemical vapor co-deposition of multi-component films with separate source precursors is the most common practice for depositing multi-component films [18][19][20][21][22], however, this route can be complex because of interactions among reactant, intermediate and product species on the surface substrate and in the gas phase [18,21,23]. The films oxygen content (as confirmed later by EDAX) is due to the fact that film top surface is oxidized by air.…”

Reactions of Cu(hfac)2 and Co2(CO)8 during Chemical Vapor Deposition of Copper−Cobalt Films

“…The most common way to deposit alloyed copper films using CVD is to simultaneously deposit copper and another metal from two separate sources. − However, this route is complicated by the interactions of the different chemical species in the gas phase and on the surface. Growth of palladium was significantly inhibited during codeposition with Pd(hfac) 2 and (vtms)Cu(hfac) (vtms = vinyltrimethylsilane) when compared with the independent CVD kinetics of Pd(hfac) 2 .…”

“…The Cu(hfac) 2 source exhibited a “massive parasitic reaction” with the Al precursor which hampered control over the composition, while Al−Cu films could be derived with a copper(I) precursor. A study of the codeposition of copper−cobalt with (hfac)Cu(1,5-Me 2 -1,5-COD) (COD = cyclooactadiene) and Co 2 (CO) 8 has been reported . Considerable difficulty in controlling the amount of Co in the film was encountered.…”

“…Considerable difficulty in controlling the amount of Co in the film was encountered. This was attributed to thermal decomposition during sublimation of Co 2 (CO) 8 …”