Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)<i>c</i>(4×4) surfaces

Карпов, И. В.; Bratina, Gvido; Sorba, L.; Franciosi, A.; Simmonds, Michael G.; Gladfelter, Wayne L.

doi:10.1063/1.357477

Cited by 20 publications

(16 citation statements)

References 29 publications

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“…Because the desorption of elemental arsenic is low at the deposition temperature of 250°C, most likely, XPS is detecting all of the created As 0 -AsO x . 34 As a result, we conclude that the substrate reaction, while contributing to the interface cleaning, is only a secondary pathway.…”

Section: Discussionmentioning

confidence: 95%

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

Gougousi¹,

Hackley²,

Demaree³

et al. 2010

J. Electrochem. Soc.

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The initial film growth ͑2-100 cycles͒ and the interface evolution of HfO 2 thin films on GaAs surfaces were investigated for an atomic layer deposition chemistry that utilizes tetrakis͑ethylmethyl͒ amino hafnium and H 2 O at 250°C. Starting surfaces include native oxide and HF or NH 4 OH-etched substrates. X-ray photoelectron spectroscopy shows that deposition on native oxide GaAs surfaces results in the gradual consumption of the arsenic and gallium oxides. Arsenic oxides are easier to remove, leaving some metallic arsenic-arsenic suboxide at the interface. The removal of the gallium oxides is slower, and some residual Ga 2 O 3 and Ga 2 O are detected after 100 process cycles. High resolution transmission electron microscopy confirms the presence of an almost sharp interface for the 100 cycle ͑12 nm͒ film and indicates that the as-deposited film is polycrystalline. The depositions on either HF or NH 4 OH-etched substrates result in a sharp interface with very little residual gallium oxide and arsenic suboxide present. Rutherford backscattering spectroscopy shows that steady-state growth comparable to that achieved on SiO 2 is reached after ϳ20 ALD cycles for all GaAs surfaces; however, high initial surface activity is detected for the etched surfaces.The deposition of high dielectric constant ͑high-k͒ materials has been studied extensively in the past decade as a potential replacement to SiO 2 in an effort to extend the lifetime of Si-based nanoelectronic devices. One of the major obstacles encountered in the introduction of high-k materials has been the inadvertent growth of low dielectric constant interfacial layers ͑ILs͒. 1 Although the presence of ILs improves the interface properties of the gate stack, it also results in the overall reduction in the stack capacitance, negating much of the benefit afforded by the introduction of the high-k material. 2 Alternative, higher mobility substrates such as Ge and III-V-based semiconductors are well known, but their use in the microelectronics industry has been hampered by the absence of a high quality native oxide comparable to the Si/SiO 2 system. 3 However, extensive research into high-k materials has led to a renewed interest in the pairing of high mobility substrates with high-k materials in future generations of nanoelectronic devices. Although the deposition of dielectrics on Si surfaces is invariably accompanied by the formation of an IL regardless of the deposition technique, several reports demonstrate a sharp interface between the high-k and the high mobility substrate. In fact, several groups have demonstrated well-behaved devices utilizing Al 2 O 3 and HfO 2 dielectrics on Ge-, GaAs-, and InGaAs-based substrates. 4-8 When atomic layer deposition ͑ALD͒ is used for the deposition of Al 2 O 3 , TiO 2 , and HfO 2 dielectrics on GaAs and InGaAs native oxide surfaces, the thinning of these surface oxides is observed. All these observations share the common thread of the use of metallorganic precursors such as trimethyl aluminum and hafnium and titanium amides...

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Section: Discussionmentioning

confidence: 95%

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

Gougousi¹,

Hackley²,

Demaree³

et al. 2010

J. Electrochem. Soc.

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“…The sample was then rapidly cooled to 70°C and exposed to an As 4 flux of about 2 ϫ 10 −5 Torr for 2 h, to cap the surface with a protective As layer. 19 The chemical mapping of the sample surface was performed at room temperature by XPEEM at the Nanospectroscopy beamline at Elettra, Italy. 20 the protective As layer was thermally removed in situ by annealing the sample to 410°C, until a clear ͑2 ϫ 4͒ reconstruction was observed by low-energy electron diffraction.…”

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confidence: 99%

Surface compositional gradients of InAs∕GaAs quantum dots

Biasiol

Heun

Golinelli

et al. 2005

Applied Physics Letters

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With laterally resolved photoemission spectroscopy, we obtained In and Ga surface concentration maps of InAs∕GaAs quantum dots. Our data demonstrate that the dot composition is neither pure InAs nor homogeneous InxGa1−xAs, but presents an In concentration increasing from the borders to the center of the dots. Besides, our observations suggest strong In segregation (x∼0.9) on the surface of the dots and of the surrounding wetting layer. Such segregation, well known for two-dimensional InAs∕GaAs growth, had not been directly observed so far on the dots, and should be taken into account to model size and composition of GaAs-overgrown structures.

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“…The layers were capped with amorphous As, 23,24 transferred to the II-VI MBE chamber and used as substrates for II-VI growth following As desorption at 450°C to achieve the GaAs͑001͒ 2ϫ4 surface reconstruction.…”

Section: Methodsmentioning

confidence: 99%

Structural and electronic properties of wide band gap Zn1−xMgxSe alloys

Pelucchi

Rubini

Bonanni

et al. 2004

Journal of Applied Physics

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We determined the properties of Zn1−xMgxSe semiconductor alloys through a combination of optical and photoelectron spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry, and ab initio pseudopotential calculations. The complementary character of the techniques and the good agreement between calculated and experimental trends allowed us to explain some of the discrepancies between the reported properties of these wide band gap alloys.

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Chemical vapor deposition of Al from dimethylethylamine alane on GaAs(100)c(4×4) surfaces

Cited by 20 publications

References 29 publications

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

Growth and Interface Evolution of HfO[sub 2] Films on GaAs(100) Surfaces

Surface compositional gradients of InAs∕GaAs quantum dots

Structural and electronic properties of wide band gap Zn1−xMgxSe alloys

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