Chemical, structural and photovoltaic properties of graded CdS_xSe_1−x thin films grown by chemical bath deposition on GaAs(100)

Abstract

Chemically graded Cd(S,Se) thin film and photovoltaic cell illustration.

Aerosol-assisted chemical vapor deposition of MSe and MSSe thin films using zinc(ii) and cadmium(ii) single source precursors containing hybrid Se,X-PNC ligands

“…ZnSe is attractive because of its wide band gap (E g = 2.7 eV), low resistivity, and remarkable photosensitivity, while CdSe has a high absorption coefficient and optimum band gap energy (E g = 1.74 eV) for efficient absorption and size-dependent emission. [1][2][3] Ternary metal sulfoselenides (MSSe) enable easy tuning of the band gap energies and properties, which enhances potential applications such as light emitting diodes, 4,5 photodetectors, 6 solar cells, 7,8 photocatalysts, 9,10 among other optoelectronic devices. 11 On the other hand, various methods have been employed for the manufacturing of metal chalcogenide thin films, including chemical vapor deposition (CVD) and its metal-organic (MOCVD) variation in combination with an aerosol assisted process (AACVD).…”