Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy

Bi-doped GeTe nanowires were fabricated using chemical vapor deposition. Composition and microstructure characterizations indicated that Bi (∼3 at. %) doping preserved GeTe rhombohedral structure with slight X-ray diffraction peak shifts, implying material parameters variation. A doping model was proposed where three Bi atoms replaced the middle adjacent Ge sites of (001) plane, accompanied by two adjacent Ge vacancies right over Bi atoms. Ab initio calculations re-validated cell parameters change. Furthermore, Bi-doping process resulted in crystalline and amorphous state resistances increased by ∼2 orders, while a crystallization time dramatically reduced down to 50 μs, 20 times shorter compared to undoped nanowires.

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High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb₂Te₃Thin Film with the Polycrystalline Phase

Lee¹,

Kim²,

Shin³

et al. 2012

Journal of the Korean Vacuum Society

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Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy

Cited by 3 publications

References 13 publications

Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment

Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment

Bi doping modulating structure and phase-change properties of GeTe nanowires

High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb₂Te₃Thin Film with the Polycrystalline Phase

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Chemical states of Bi-doped GeTe (Bi: 6 at.%) thin film in structural phase transition investigated by synchrotron X-ray photoelectron spectroscopy

Cited by 3 publications

References 13 publications

Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment

Effect of nitrogen on structural stability of bismuth doped GeTe films under thermal treatment

Bi doping modulating structure and phase-change properties of GeTe nanowires

High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb2Te3Thin Film with the Polycrystalline Phase

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High-Resolution X-Ray Photoelectron Spectroscopy Study of a Sb₂Te₃Thin Film with the Polycrystalline Phase