Chemical shrink materials and process for negative tone development (NTD) resist

Miyamoto, Yoshinari; Sagan, John P.; Padmanaban, Munirathna; Pawlowski, Georg; Nagahara, Tatsuro

doi:10.1117/12.2046311

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“…Based on these advantages, chemical shrink materials have been widely used in semiconductor device production. Of course this chemical shrink process can be combined with NTD process, and its achievement of fine patterning was reported previously [4,5].…”

Section: Introductionmentioning

confidence: 99%

Extension of 193nm Lithography by Chemical Shrink Process

Sekito

Matsuura

Nagahara

2016

J. Photopol. Sci. Technol.

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Roughness improvement of Negative Tone Development (NTD) photoresist by chemical shrink process is discussed in this paper for the extension of 193 nm lithography. Addition to feature size shrinkage, improvement of photoresist roughness is also important subject for advanced node device manufacturing. New shrink materials were evaluated by Scan Probe Microscope (SPM) and a material improved surface roughness by 37%. Moreover, 28% improvement of Contact Edge Roughness (CER) was confirmed.

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Section: Introductionmentioning

confidence: 99%